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首页> 外文期刊>Japanese journal of applied physics >Nucleation and Crystal Growth of Si_(1-x)Ge_x Melts during Rapid Cooling Processes: A Molecular-Dynamics Study
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Nucleation and Crystal Growth of Si_(1-x)Ge_x Melts during Rapid Cooling Processes: A Molecular-Dynamics Study

机译：Si_（1-x）Ge_x熔体在快速冷却过程中的成核作用和晶体生长：分子动力学研究

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摘要

To clarify the growth mechanism of the lateral growth of Ge in the rapid-melting-growth process, two types of molecular-dynamics simulation were investigated in this study. One was the nucleation of Si_(1-x)Ge_x (0 ≤ × ≤ 1) from supercooled melts, and the other is the growth rate of supercooled Si_(1-x)Ge_x melts using a crystalline Si_(1-x)Ge_x seed. The incubation time is found to be minimum at approximately 0.70 Tm (Tm: melting temperature for Si_(1-x)Ge_x). No nucleation was found when the temperature was higher than 0.75 T_m. The crystal growth rates of Si_(1-x)Ge_x peaked between 0.90 Tm and 0.94 T_m for both the [100] and [111] orientations. These results suggest that 0.90 T_m to 0.94 T_m of Si_(1-x)Ge_x (x = 1) is an optimum temperature range to grow crystalline Ge in the rapid-melting-growth process.
机译：为了阐明Ge在快速熔融生长过程中横向生长的生长机理，本研究研究了两种类型的分子动力学模拟。一种是过冷熔体中Si_（1-x）Ge_x（0≤×≤1）的形核，另一种是使用结晶Si_（1-x）Ge_x的过冷Si_（1-x）Ge_x熔体的生长速率种子。发现孵育时间最短为大约0.70 Tm（Tm：Si_（1-x）Ge_x的熔化温度）。当温度高于0.75 T_m时，未发现成核。对于[100]和[111]取向，Si_（1-x）Ge_x的晶体生长速率在0.90Tm和0.94T_m之间达到峰值。这些结果表明，Si_（1-x）Ge_x（x = 1）的0.90 T_m至0.94 T_m是在快速熔融生长过程中生长晶体Ge的最佳温度范围。

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  • 来源
    《Japanese journal of applied physics》 |2012年第3issue1期|p.035601.1-035601.6|共6页
  • 作者

    Yanping Xiao; Jun Taguchi; Teruaki Motooka; Shinji Munetoh;

  • 作者单位

    Department of Materials Science and Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Department of Materials Science and Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Department of Materials Science and Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Department of Materials Science and Engineering, Kyushu University, Fukuoka 819-0395, Japan;

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