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首页> 外文期刊>Japanese journal of applied physics >Material Properties of Barium Titanate Single Crystal from Modified Time-Dependent Devonshire-Ginzburg-Landau Model
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Material Properties of Barium Titanate Single Crystal from Modified Time-Dependent Devonshire-Ginzburg-Landau Model

机译:修正的Devonshire-Ginzburg-Landau模型的钛酸钡单晶的材料特性

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摘要

We simulated and compared the material properties of barium titanate for five states, namely, (1) the orthorhombic state, (2) the orthorhombic state near the orthorhombic-tetragonal phase boundary, (3) the tetragonal state near the orthorhombic-tetragonal phase boundary, (4) the tetragonal state, and (5) the tetragonal state near the tetragonal-cubic phase boundary by using a modified time-dependent Devonshire-Ginzburg-Landau model. We reproduced reasonable variations in piezoelectric coefficients, dielectric susceptibilities, and elastic compliance constants for the above-mentioned five states, especially for the phase boundary states. Moreover, we simulated the hysteresis curves of the dependence of electric polarization and strain on electric field and the dependence of the hysteresis curves on compressive stress. The obtained simulation results are well explained by the polarization rotation or extension, which is made easy by the free energy flattening induced by temperature or electric field.
机译:我们模拟并比较了钛酸钡在五个状态下的材料特性,即(1)正交晶体状态,(2)正交-四方相界附近的正交状态,(3)正交-四方相界附近的四方状态。 ,(4)四方态,和(5)通过使用修正的时变Devonshire-Ginzburg-Landau模型,在四方立方相边界附近的四方态。我们针对上述五个状态,尤其是对于相边界状态,再现了压电系数,介电常数和弹性柔度常数的合理变化。此外,我们模拟了极化和应变对电场的依赖关系的磁滞曲线,以及磁滞曲线对压应力的依赖关系。极化旋转或扩展很好地解释了获得的模拟结果,而极化旋转或扩展由于温度或电场引起的自由能变平而变得容易。

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  • 来源
    《Japanese journal of applied physics》 |2012年第3issue1期|p.031502.1-031502.9|共9页
  • 作者

    Syunji Imanaga; Kaoru Miura;

  • 作者单位

    Nanomaterials Development Department 32, Nanomaterials Technology Development Center, Corporate R&D Headquarters, CANON, Inc., Ota, Tokyo 146-8501, Japan;

    Nanomaterials Development Department 32, Nanomaterials Technology Development Center, Corporate R&D Headquarters, CANON, Inc., Ota, Tokyo 146-8501, Japan;

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