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首页> 外文期刊>Japanese journal of applied physics >Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrO_x/AlO_x/W Cross-Point
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Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrO_x/AlO_x/W Cross-Point

机译：使用IrO_x / AlO_x / W交叉点的无编排低功耗电阻开关存储器具有出色的一致性和多级操作

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摘要

Excellent uniformity and multilevel operation in formation-free low-power resistive switching memory fabricated using the IrO_x/AlO_x/W cross-point structure have been investigated. The thickness of the deposited films has been measured by high-resolution transmission electron microscopy with energy dispersive X-ray spectroscopy for each layer. The cross-point resistive switching memory devices have a tight distribution of SET/RESET voltages and low/high-resistance states as well as switching cycles. A high resistance ratio of >8 × 10~2 is obtained. This memory device shows excellent AC endurance of >5 × 10~3 cycles, read endurance of >1 × 10~5 cycles, and 10-year-data retention at 85℃ at a low power of 55 μW and low-current compliances of 50-200 μA. This study is not only important for cross-point memories but will also help in the design of high-density nanoscale nonvolatile memories in the future.
机译：研究了使用IrO_x / AlO_x / W交叉点结构制造的无结构低功耗电阻式开关存储器的出色一致性和多级操作。沉积膜的厚度已经通过具有能量色散X射线光谱学的高分辨率透射电子显微镜对每层进行了测量。交叉点电阻式开关存储器件具有紧密分布的SET / RESET电压和低/高电阻状态以及开关周期。获得> 8×10〜2的高电阻比。该存储器件在55μW的低功耗和低电流柔和度下，在5℃时具有出色的交流耐久度，> 5×10〜3个周期，读取耐久度> 1×10〜5个周期，在85℃时可保存10年的数据。 50-200μA。这项研究不仅对于交叉点存储器很重要，而且在将来也将有助于设计高密度纳米级非易失性存储器。

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  • 来源
    《Japanese journal of applied physics》 |2012年第4issue2期|p.04DD10.1-04DD10.6|共6页
  • 作者

    Writam Banerjee; Sk. Ziaur Rahaman; Siddheswar Maikap;

  • 作者单位

    Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan;

    Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan;

    Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan;

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