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首页> 外文期刊>Japanese journal of applied physics >Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation
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Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation

机译：外延生长结合Ge缩合制备的Ge层的光学性质的改善

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摘要

Single crystal Ge layers were successfully fabricated on the buried oxide layer of a silicon-on-insulator wafer using a combined technique of two-step selective epitaxial growth and Ge condensation. X-ray diffraction measurements revealed that the single crystal Ge layer formed on the buried oxide layer had a tensile strain of 0.07% on the <110> lattice plane in a large unpattemed area. Furthermore, a steep photoluminescence spectrum was obtained from Ge stripes fabricated on the buried oxide layer, and a red shift in the photoluminescence peak was observed due to tensile strain with a wavelength of 1620 nm. The peak intensity of a 10-mm-wide Ge stripe on the buried oxide layer was three times higher than that on a Ge stripe on an Si substrate, which was achieved by improving the crystallinity and carrier confinement within the Ge stripes. These results indicate that this combined technique efficiently improves the performance of Ge light-emitting devices.
机译：使用两步选择性外延生长和Ge缩合的组合技术，在绝缘体上硅晶片的掩埋氧化物层上成功制造了单晶Ge层。 X射线衍射测量表明，形成在掩埋氧化物层上的单晶Ge层在大的未构图区域中在<110>晶面上具有0.07％的拉伸应变。此外，从在掩埋氧化物层上制造的Ge条纹获得陡峭的光致发光光谱，并且由于波长为1620nm的拉伸应变而观察到光致发光峰的红移。掩埋氧化物层上10毫米宽的Ge条纹的峰值强度比Si衬底上的Ge条纹的峰值强度高三倍，这是通过改善Ge条纹内的结晶度和载流子限制实现的。这些结果表明，该组合技术有效地改善了Ge发光器件的性能。

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  • 来源
    《Japanese journal of applied physics》 |2012年第4issue2期|p.04DG10.1-04DG10.5|共5页
  • 作者

    Katsuya Oda; Kazuki Tani; Shin-ichi Saito; Tadashi Okumura; Tatemi Ido;

  • 作者单位

    Photonics Electronics Technology Research Association, Kokubunji, Tokyo 185-8601, Japan,Institute for Photonics-Electronics Convergence System Technology, Kokubunji, Tokyo 185-8601, Japan,Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Photonics Electronics Technology Research Association, Kokubunji, Tokyo 185-8601, Japan,Institute for Photonics-Electronics Convergence System Technology, Kokubunji, Tokyo 185-8601, Japan,Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Photonics Electronics Technology Research Association, Kokubunji, Tokyo 185-8601, Japan,Institute for Photonics-Electronics Convergence System Technology, Kokubunji, Tokyo 185-8601, Japan,Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Photonics Electronics Technology Research Association, Kokubunji, Tokyo 185-8601, Japan,Institute for Photonics-Electronics Convergence System Technology, Kokubunji, Tokyo 185-8601, Japan,Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

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