Enhancing the Performance of Pentacene-Based Organic Thin Film Transistors by Inserting Stacked N,N'-Diphenyl-N,N'-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine and Tris(8-hydroxyquinolino)-aluminum Buffer Layers

Chung-Ming Wu; Shui-Hsiang Su; Wei-Chin Weng; Hsiang-Lin Tsai; Meiso Yokoyama

首页> 外文期刊>Japanese journal of applied physics >Enhancing the Performance of Pentacene-Based Organic Thin Film Transistors by Inserting Stacked N,N'-Diphenyl-N,N'-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine and Tris(8-hydroxyquinolino)-aluminum Buffer Layers

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Enhancing the Performance of Pentacene-Based Organic Thin Film Transistors by Inserting Stacked N,N'-Diphenyl-N,N'-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine and Tris(8-hydroxyquinolino)-aluminum Buffer Layers

机译：通过插入堆叠的N，N'-联苯-N，N'-双（1-萘基-苯基）-（1,1'-联苯）-4,4'-二胺来增强基于并五苯的有机薄膜晶体管的性能和三（8-羟基喹啉基）-铝缓冲层

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Organic thin-film transistors (OTFTs) were fabricated using various buffer layers between the active layer and source/drain electrodes. The device structure was glass/indium-tin oxide (ITO)/poly(methyl methacrylate) (PMMA)/pentacene/buffer layer/Ag (source/drain). N,N'-diphenyl-N,N'-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine (NPB), tris(8-hydroxyquinolino)-aluminum (Alq_3), Alq_3/NPB, and NPB/Alq_3 films were used as the buffer layers, respectively. The OTFTs using stacked NPB/Alq_3 as a buffer layer exhibited a field-effect mobility of 0.31 cm~2 V~(-1)s~(-1), on-off drain current ratio of 6.7 × 10~5, and threshold voltage of -16.8V. Additionally, the interface mechanism and contact resistance were determined by ultraviolet photoelectron spectroscopy (UPS) and the transmission line method (TLM). Experimental results indicate that a low energy barrier between the electrode and pentacene enhances the ability of holes to transfer from an electrode to pentacene. Moreover, inserting a buffer layer between the electrode and pentacene reduces the contact resistance. Such an improvement is attributed to the weak interface dipole at the interface of the active layer and electrodes.

机译：使用有源层和源/漏电极之间的各种缓冲层来制造有机薄膜晶体管（OTFT）。器件结构为玻璃/氧化铟锡（ITO）/聚甲基丙烯酸甲酯（PMMA）/并五苯/缓冲层/ Ag（源极/漏极）。 N，N'-二苯基-N，N'-双（1-萘基苯基）-（1,1'-联苯）-4,4'-二胺（NPB），三（8-羟基喹啉）-铝（Alq_3 ），Alq_3 / NPB和NPB / Alq_3膜分别用作缓冲层。使用堆叠的NPB / Alq_3作为缓冲层的OTFT的场效应迁移率为0.31 cm〜2 V〜（-1）s〜（-1），开关电流比为6.7×10〜5，阈值电压为-16.8V。另外，通过紫外线光电子能谱（UPS）和传输线法（TLM）确定界面机理和接触电阻。实验结果表明，电极与并五苯之间的低能垒提高了空穴从电极向并五苯转移的能力。此外，在电极和并五苯之间插入缓冲层降低了接触电阻。这种改进归因于活性层和电极的界面处的弱界面偶极子。

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来源
《Japanese journal of applied physics》 |2012年第4issue2期|p.04DK06.1-04DK06.6|共6页
作者
Chung-Ming Wu; Shui-Hsiang Su; Wei-Chin Weng; Hsiang-Lin Tsai; Meiso Yokoyama;
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Department of Electronic Engineering, I-Shou University, Kaohsiung County 840, Taiwan;

Department of Electronic Engineering, I-Shou University, Kaohsiung County 840, Taiwan;

Department of Electronic Engineering, I-Shou University, Kaohsiung County 840, Taiwan;

Department of Electronic Engineering, I-Shou University, Kaohsiung County 840, Taiwan;

Department of Electronic Engineering, I-Shou University, Kaohsiung County 840, Taiwan;

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Enhancing the Performance of Pentacene-Based Organic Thin Film Transistors by Inserting Stacked N,N'-Diphenyl-N,N'-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine and Tris(8-hydroxyquinolino)-aluminum Buffer Layers

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