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首页> 外文期刊>Japanese journal of applied physics >Continuous Electron Doping of Single-Walled Carbon Nanotube Films Using Inkjet Technique
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Continuous Electron Doping of Single-Walled Carbon Nanotube Films Using Inkjet Technique

机译：使用喷墨技术对单壁碳纳米管薄膜进行连续电子掺杂

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摘要

The fabrication of logic circuits using the inkjet technique has attracted especially strong interest owing to wide range applications such as flexible and printed electronics. Although logic circuits fabricated using the inkjet method have already been accomplished, the precise control of gate threshold voltages has not been realized yet. In this study, we have demonstrated electron doping of single-watted carbon nanotube (SWCNT) films by inkjet printing of dilute poly(ethylene imine) (PEI) ink. We have successfully obtained the continuous threshold voltage shift by varying the number of doping steps, indicating that the carrier concentration in PEI ink is much lower than that of our previous work.
机译：由于诸如柔性和印刷电子之类的广泛应用，使用喷墨技术制造逻辑电路引起了特别强烈的兴趣。尽管已经完成了使用喷墨方法制造的逻辑电路，但是尚未实现对栅极阈值电压的精确控制。在这项研究中，我们已经证明了通过喷墨印刷稀聚（乙烯亚胺）（PEI）墨水对单瓦碳纳米管（SWCNT）薄膜进行电子掺杂。通过改变掺杂步骤的数量，我们成功地获得了连续的阈值电压偏移，这表明PEI墨水中的载流子浓度远低于我们先前的工作。

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  • 来源
    《Japanese journal of applied physics》 |2012年第6issue2期|p.06FD18.1-06FD18.3|共3页
  • 作者

    Satoki Matsuzaki; Yuki Nobusa; Ryo Shimizu; Kazuhiro Yanagi; Hiromichi Kataura; Taishi Takenobu;

  • 作者单位

    Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University,Shinjuku, Tokyo 169-8555, Japan;

    Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University,Shinjuku, Tokyo 169-8555, Japan;

    Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University,Shinjuku, Tokyo 169-8555, Japan;

    Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan;

    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan;

    Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University,Shinjuku, Tokyo 169-8555, Japan;

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