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首页> 外文期刊>Japanese journal of applied physics >Additional Electrochemical Treatment Effects on the Switching Characteristics of Anodic Porous Alumina Resistive Switching Memory
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Additional Electrochemical Treatment Effects on the Switching Characteristics of Anodic Porous Alumina Resistive Switching Memory

机译：附加电化学处理对阳极多孔氧化铝电阻开关记忆的开关特性的影响

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摘要

We have investigated the current-voltage characteristics of a resistive switching memory (ReRAM), especially the reproducibility of the switching voltage between an insulating state and a metallic state. The poor reproducibility hinders the practical use of this memory. According to a filament model, the variation of the switching voltage may be understood in terms of the random choice of filaments with different conductivities and lengths at each switching. A limitation of the number of conductive paths is expected to lead to the suppression of the variation of switching voltage. In this study, two strategies for the limitation have been proposed using an anodic porous alumina (APA). The first is the reduction of the number of conductive paths by restriction of the contact area between the top electrodes and the insulator. The second is the lowering of the resistivity of the insulator, which makes it possible to grow filaments with the same characteristics by electrochemical treatments using a pulse-electroplating technique.
机译：我们已经研究了电阻式开关存储器（ReRAM）的电流-电压特性，特别是绝缘状态和金属状态之间的开关电压可再现性。可复制性差会阻碍该存储器的实际使用。根据灯丝模型，可以根据在每次开关时具有不同电导率和长度的灯丝的随机选择来理解开关电压的变化。预期导电路径数量的限制将导致抑制开关电压的变化。在这项研究中，已经提出了两种使用阳极多孔氧化铝（APA）进行限制的策略。首先是通过限制顶部电极和绝缘体之间的接触面积来减少导电路径的数量。第二是降低绝缘子的电阻率，这使得可以通过使用脉冲电镀技术的电化学处理来生长具有相同特性的细丝。

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  • 来源
    《Japanese journal of applied physics》 |2012年第6issue2期|p.06FF11.1-06FF11.4|共4页
  • 作者

    Shintaro Otsuka; Ryouta Takeda; Saeko Furuya; Tomohiro Shimizu; Shouso Shingubara; Nobuyuki Iwata; Tadataka Watanabe; Yoshiki Takano; Kouichi Takase;

  • 作者单位

    College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan;

    College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan;

    College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan;

    Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan;

    Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan;

    College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan;

    College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan;

    College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan;

    College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan;

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