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首页> 外文期刊>Japanese journal of applied physics >Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes
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Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes

机译：InGaN插入层在基于氮化物的发光二极管上的作用

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摘要

In this study, we systematically investigate the effect of InGaN insertion layer (IL) on nitride-based light-emitting diodes. First, a series of samples with different InGaN ILs (Si doping level, thickness) were fabricated and investigated. An optimized condition of the IL was obtained based on current-voltage and electroluminescence measurements. Furthermore, in order to investigate the dominant mechanism for the improved performance of the samples with IL, the optimized sample and a control sample without InGaN IL were compared by means of X-ray diffraction, atomic force microscopy, photoluminescence, injection-current-dependent electroluminescence measurements and infrared camera images. Based on the discussion of these measurement results, we conclude that the performance improvements of samples with InGaN IL are due to both the effects of strain relaxation and better current spreading.
机译：在这项研究中，我们系统地研究了InGaN插入层（IL）对氮化物基发光二极管的影响。首先，制造并研究了具有不同InGaN IL（Si掺杂水平，厚度）的一系列样品。基于电流-电压和电致发光测量获得IL的最佳条件。此外，为了研究改善具有IL的样品的性能的主要机理，通过X射线衍射，原子力显微镜，光致发光，注入电流依赖性比较了优化样品和不含InGaN IL的对照样品。电致发光测量和红外摄像机图像。基于对这些测量结果的讨论，我们得出结论，采用InGaN IL的样品的性能改进归因于应变松弛效应和更好的电流扩散效应。

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  • 来源
    《Japanese journal of applied physics》 |2012年第7issue1期|p.072101.1-072101.6|共6页
  • 作者

    Zhiyuan Zheng; Zimin Chen; Yulun Xian; Bingfeng Fan; Shanjin Huang; Weiqing Jia; Zhisheng Wu; Gang Wang; Hao Jiang;

  • 作者单位

    State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

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