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首页> 外文期刊>Japanese journal of applied physics >Evaluation of Crystal Orientation for (K,Na)NbO_3 Films Using X-ray Diffraction Reciprocal Space Map and Relationship between Crystal Orientation and Piezoelectric Coefficient
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Evaluation of Crystal Orientation for (K,Na)NbO_3 Films Using X-ray Diffraction Reciprocal Space Map and Relationship between Crystal Orientation and Piezoelectric Coefficient

机译：利用X射线衍射互易空间图评价（K，Na）NbO_3薄膜的晶体取向及晶体取向与压电系数的关系

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摘要

We have found an effective method for the evaluation of the crystal orientation of (K,Na)NbO_3 (KNN) films in the (K,Na)NbO_3/Pt/Ti/SiO_2/Si structure using X-ray diffraction (XRD) reciprocal space maps. Previously, the crystal structure and orientation of such (K,Na)NbO_3 films were evaluated using 2θ/θ XRD, and were considered to be the pseudocubic perovskite structure with preferential (001) orientation and no (111) orientation. Here, we applied the new method using XRD reciprocal space maps, and discovered that the (K,Na)NbO_3 films had some degree of KNN(111) orientation. We calculated the KNN(001)- and KNN(111)-orientation volume fractions for the (K,Na)NbO_3 films from the (101) diffraction peaks originating from the KNN{001)- and KNN(111)-orientation elements in the XRD reciprocal space maps, considering the calibration factors obtained from pole-figure simulations, and examined the relationship between the crystal orientation and d_(31) piezoelectric coefficient in the (K,Na)NbO_3 films. The results indicated that the d_(31) piezoelectric coefficient increases with increasing (001)-orientation volume fraction.
机译：我们已经找到了一种有效的方法，可以使用X射线衍射（XRD）倒数来评估（K，Na）NbO_3 / Pt / Ti / SiO_2 / Si结构中的（K，Na）NbO_3（KNN）膜的晶体取向空间图。以前，（K，Na）NbO_3薄膜的晶体结构和取向是使用2θ/θXRD进行评估的，被认为是具有优先（001）取向和无（111）取向的伪立方钙钛矿结构。在这里，我们使用XRD互易空间图应用了该新方法，并发现（K，Na）NbO_3薄膜具有一定程度的KNN（111）取向。我们从（101）衍射峰（源自KNN {001）和KNN（111）取向元素的（101）衍射峰计算了（K，Na）NbO_3膜的KNN（001）和KNN（111）取向体积分数。 XRD互易空间图，考虑了从极图模拟获得的校准因子，并研究了（K，Na）NbO_3薄膜中晶体取向与d_（31）压电系数之间的关系。结果表明，d_（31）压电系数随着（001）取向体积分数的增加而增加。

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  • 来源
    《Japanese journal of applied physics》 |2012年第7issue1期|p.075502.1-075502.6|共6页
  • 作者

    Kenji Shibata; Kazufumi Suenaga; Kazutoshi Watanabe; Fumimasa Horikiri; Tomoyoshi Mishima; Masaharu Shiratani;

  • 作者单位

    Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan,Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan;

    Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan;

    Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan;

    Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

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