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首页> 外文期刊>Japanese journal of applied physics >Enhancement of Temperature Sensitivity for Metal-Insulator-Semiconductor Temperature Sensors by Using Bi_2Mg_(2/3)Nb_(4/3)O_7 Film
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Enhancement of Temperature Sensitivity for Metal-Insulator-Semiconductor Temperature Sensors by Using Bi_2Mg_(2/3)Nb_(4/3)O_7 Film

机译:使用Bi_2Mg_(2/3)Nb_(4/3)O_7膜增强金属-绝缘体-半导体温度传感器的温度灵敏度

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摘要

Metal-insulator-semiconductor (MIS) type temperature sensors with Bi_2Mg_(2/3)Nb_(4/3)O_7 (BMNO) film are introduced to improve temperature detecting ability. The current gain of presented sensor is nearly 180 within 7-77 ℃ which is more than the double amount of current gain in previous work. Dielectric thickness dependency of sensor is also decreased comparing with previous sensor. Temperature detecting mechanisms were analyzed by current and temperature relationship. It was also shown that these sensors were reliable through the temperature cycling test.
机译:引入具有Bi_2Mg_(2/3)Nb_(4/3)O_7(BMNO)膜的金属绝缘体(MIS)型温度传感器,以提高温度检测能力。该传感器的电流增益在7-77℃范围内接近180,这是先前工作中电流增益的两倍。与以前的传感器相比,传感器的介电厚度依赖性也降低了。通过电流和温度关系分析了温度检测机制。还表明,这些传感器在温度循环测试中是可靠的。

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  • 来源
    《Japanese journal of applied physics》 |2012年第8issue1期|p.080206.1-080206.3|共3页
  • 作者单位

    Department of Electronic Engineering, Myongji University, Yongin, Gyeonggi 449-728, Republic of Korea;

    School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea;

    School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea;

    School of Nano Science and Technology, Chungnam National University, Daejon 305-764, Republic of Korea;

    Department of Electronic Engineering, Myongji University, Yongin, Gyeonggi 449-728, Republic of Korea;

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