...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation
【24h】

Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

机译：蒙特卡罗模拟研究极端紫外光刻中化学放大抗蚀剂的随机效应与线边缘粗糙度之间的关系

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The fluctuation of the line edge of resist patterns, called line edge roughness (LER), has been the most serious problem in the development of next-generation lithography. The major root cause of LER is the chemical inhomogeneity at the boundary between the insoluble and soluble regions of the resist. In this study, the stochastic effect induced in the processes of formation of resist patterns was investigated using a Monte Carlo method. The relative standard deviation of acid concentration was smaller than that of absorbed photons. The relative standard deviation of protected units was smaller than that of acid concentration. By comparing the simulation results with the reported values of LER, it was found that the stochastic effect is further reduced in the development and rinse processes.
机译：抗蚀剂图案的线边缘的波动（称为线边缘粗糙度（LER））是下一代光刻技术发展中最严重的问题。 LER的主要原因是在抗蚀剂的不溶和可溶区域之间的边界处的化学不均匀性。在这项研究中，使用蒙特卡洛方法研究了在抗蚀剂图案形成过程中引起的随机效应。酸浓度的相对标准偏差小于吸收的光子。被保护单元的相对标准偏差小于酸浓度。通过将模拟结果与LER的报告值进行比较，发现在显影和冲洗过程中随机效应进一步降低。

著录项

  • 来源
    《Japanese journal of applied physics》 |2012年第8issue1期|p.086504.1-086504.6|共6页
  • 作者

    Takahiro Kozawa;

  • 作者单位

    The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号