Epitaxial Growth of AIGaN /GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

Kazuyuki Hirama; Yoshitaka Taniyasu; Makoto Kasu

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Epitaxial Growth of AIGaN /GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

机译：在金刚石（111）表面上外延生长AIGaN / GaN高电子迁移率晶体管结构

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Epitaxial growth of an AlGaN/GaN high-electron mobility trainsistor (HEMT) structure on a diamond (111) substrate was investigated. Due to the misorientation of the diamond (111) surface, the AIGaN/GaN HEMT structure showed the macro-step surface. Using diamond surfaces with two different misorientation angles (3 and 0.5°), we found that the one with the small misorientation angle is effective for obtaining a flat AIGaN/GaN HEMT surface. Threading dislocation density of the AIGaN/GaN HEMT structure grown on the diamond (111) surface was evaluated from cross-sectional transmission electron microscope images. The densities of pure-screw-, pure-edge- and mixed-type threading dislocation were 0.3 × 10~9, 4.1 × 10~9, and 4.5 × 10~9cm~2, respectively. The AIGaN/GaN HEMT eptaxially grown on the diamond (111) substrate showed the maximum drain current of 800mA/mm with little self-heating effect.

机译：研究了在金刚石（111）衬底上AlGaN / GaN高电子迁移率电阻（HEMT）结构的外延生长。由于金刚石（111）表面的取向不良，AIGaN / GaN HEMT结构显示出宏观台阶表面。使用具有两个不同的取向错误角度（3和0.5°）的金刚石表面，我们发现，取向角度小的金刚石表面对于获得平坦的AIGaN / GaN HEMT表面是有效的。从横截面透射电子显微镜图像评估生长在金刚石（111）表面上的AIGaN / GaN HEMT结构的螺纹位错密度。纯螺纹，纯边缘和混合型螺纹位错的密度分别为0.3×10〜9、4.1×10〜9和4.5×10〜9cm〜2。在金刚石（111）衬底上轴向生长的AIGaN / GaN HEMT具有800mA / mm的最大漏极电流，几乎没有自热效应。

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《Japanese journal of applied physics》 |2012年第9issue1期|p.090114.1-090114.4|共4页
作者
Kazuyuki Hirama; Yoshitaka Taniyasu; Makoto Kasu;
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NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan,Department of Electric and Electronical Engineering, Saga University, Saga 840-8502, Japan;

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1. AIGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy [J] . Kazuyuki Hirama, Yoshitaka Taniyasu, Makoto Kasu Applied Physics Letters . 2011,第16期

机译：通过金属有机气相外延在单晶金刚石（111）衬底上生长的具有低热阻的AIGaN / GaN高电子迁移率晶体管
2. Growth and Device Properties of AIGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate [J] . Kazuyuki Hirama, Makoto Kasu, Yoshitaka Taniyasu Japanese journal of applied physics . 2012,第1ISSUE2期

机译：金刚石衬底上AIGaN / GaN高电子迁移率晶体管的生长和器件特性
3. Local stress induced by diamond-like carbon liner in AIGaN/GaN metal- oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics [J] . Xinke Liu, Bin Liu, Edwin Kim Fong Low, Applied Physics Letters . 2011,第18期

机译：类金刚石碳衬里在AIGaN / GaN金属氧化物半导体高电子迁移率晶体管中引起的局部应力及其对电特性的影响
4. P-type GaN epitaxial layers and AIGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE [C] . A.Usikov, O.Kovalenkov, V.Ivantsov, Symposium on GaN, AIN, InN and Their Alloys . 2005

机译：P型GaN外延层和Aigan / GaN异质结构，具有高空穴浓度和HVPE生长的流动性
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations [O] . H.-P. Lee, J. Perozek, L. D. Rosario, -1

机译：使用不同缓冲层配置的200mm硅（111）衬底上的AlGaN / GaN高电子迁移率晶体管结构研究
7. Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor [O] . Rogachev I.A., Knyazkov A.V., Meshkov O.I., 2016

机译：AlGaN / GaN高电子迁移率晶体管外延异质结构上欧姆接触和栅极的形成特征。
8. Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates [R] . Chichibu, S., Hazu, K. 2011

机译：m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管

Epitaxial Growth of AIGaN /GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

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