...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >Analysis of Gain-Switching Characteristics Including Strong Gain Saturation Effects in Low-Dimensional Semiconductor Lasers
【24h】

Analysis of Gain-Switching Characteristics Including Strong Gain Saturation Effects in Low-Dimensional Semiconductor Lasers

机译：低尺寸半导体激光器中包括强增益饱和效应的增益转换特性分析

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The effects of gain nonlinearities on gain-switched short-pulse-generation characteristics are analyzed via rate equations assuming a nonlinear-gain model including a gain saturation parameter g_s to quantitatively describe the strong gain-saturation nonlinearity in low-dimensional semiconductor lasers at high carrier densities. It was found that the minimum pulse width and the delay time are mainly determined by g_s rather than a differential gain coefficient g_o and a gain compression factor ε. By tracing the temporal evolution of carrier density, photon density, and material gain during gain switching, distinctly different effects of g_s, ε, and cavity lifetime T_p on pulse generation were clarified.
机译：通过速率方程分析增益非线性对增益切换短脉冲产生特性的影响，假设包含增益饱和参数g_s的非线性增益模型，以定量描述高载流子中低维半导体激光器的强增益-饱和非线性。密度。发现最小脉冲宽度和延迟时间主要由g_s确定，而不是由微分增益系数g_o和增益压缩系数ε决定。通过追踪载流子密度，光子密度和增益切换过程中材料增益的时间演变，可以清楚地看出g_s，ε和腔寿命T_p对脉冲产生的明显不同的影响。

著录项

  • 来源
    《Japanese journal of applied physics》 |2012年第9issue1期|p.098001.1-098001.2|共2页
  • 作者

    Shaoqiang Chen; Masahiro Yoshita; Takashi Ito; Toshimitsu Mochizuki; Hidefumi Akiyama; Hiroyuki Yokoyama; Kenji Kamide; Tetsuo Ogawa;

  • 作者单位

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan,New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan;

    Department of Physics, Osaka University, Toyonaka, Osaka 560-0043, Japan;

    Department of Physics, Osaka University, Toyonaka, Osaka 560-0043, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号