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首页> 外文期刊>Japanese journal of applied physics >Epitaxial Lateral Overgrowth of Diamonds on Iridium by Patterned Nucleation and Growth Method
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Epitaxial Lateral Overgrowth of Diamonds on Iridium by Patterned Nucleation and Growth Method

机译：图案化成核和生长方法在铱上金刚石外延横向过度生长

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摘要

Epitaxial lateral overgrowth (ELO) of diamond on lr(001)/MgO(001) substrates was demonstrated by using a patterned nucleation and growth method. Epitaxial nucleation areas of fine line shape aligned with various crystal orientations were prepared on an lr(001) surface before diamond growth. The growth rate of the diamonds in the lateral direction markedly changed depending on both the crystal orientation and the growth conditions. A lateral/vertical growth rate ratio of approximately 4.9 was obtained. The full widths at half maximum of the diamond Raman peak observed at the laterally grown areas were approximately threefold better than that of the vertically grown areas on the nucleation sites.
机译：通过使用图案化成核和生长方法，证明了金刚石在lr（001）/ MgO（001）衬底上的外延横向过度生长（ELO）。在钻石生长之前，在lr（001）表面上准备了与各种晶体取向对齐的细线形状的外延形核区域。金刚石在横向上的生长速率明显取决于晶体取向和生长条件。获得了大约4.9的横向/垂直增长率。在横向生长区域观察到的金刚石拉曼峰的半峰全宽大约比成核位置垂直生长区域的三倍大。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue1期|p.090101.1-090101.5|共5页
  • 作者

    Yutaka Ando; Takashi Kamano; Kazuhiro Suzuki; Atsuhito Sawabe;

  • 作者单位

    Department of CVD Diamond, Tomei Diamond Co., Ltd., Oyama, Tochigi 323-0807, Japan;

    Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara 229-8558, Japan;

    Toplas Engineering Co., Ltd., Chofu, Tokyo 182-0006, Japan;

    Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara 229-8558, Japan;

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