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首页> 外文期刊>Japanese journal of applied physics >Composition Dependence of Piezoelectric Properties of Pb(Zr,Ti)O_3 Films Prepared by Combinatorial Sputtering
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Composition Dependence of Piezoelectric Properties of Pb(Zr,Ti)O_3 Films Prepared by Combinatorial Sputtering

机译：组合溅射制备Pb（Zr，Ti）O_3薄膜的压电特性的组成依赖性

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摘要

We examined the composition and orientation dependences of the piezoelectric properties by combinatorial sputtering. PbTiO_3 and PbZrO_3 were simultaneously sputtered to prepare composition gradient Pb(Zr,Ti)O_3 (PZT) films on Pt/Ti/Si substrates, and an almost linear composition gradient was observed in a range of Zr/(Zr + Ti) ratios from 0.33 to 0.76. Dielectric and piezoelectric properties attained maximum at the Zr/Ti composition close to the rnorphotropic phase boundary (MPB), which is consistent with that of PZT ceramics. {100}-oriented PZT films showed a higher dielectric constant than the PZT films with the other orientations, while the PZT films with {111} + {100} mixed orientation showed larger values of e_(31),f. These results suggest that the a-axis orientation is dominant in the {100}-oriented PZT films. In this study, we demonstrated that the combinatorial sputtering method enables the precise evaluation of the composition dependence of piezoelectric and dielectric properties.
机译：我们通过组合溅射检查了压电性能的组成和取向依赖性。同时溅射PbTiO_3和PbZrO_3以在Pt / Ti / Si衬底上制备成分梯度Pb（Zr，Ti）O_3（PZT）膜，并且在Zr /（Zr + Ti）比范围内观察到几乎线性的成分梯度0.33至0.76。 Zr / Ti成分在接近各向异性相界（MPB）的位置处达到了最大的介电和压电性能，这与PZT陶瓷的相一致。 {100}取向的PZT薄膜的介电常数高于其他取向的PZT薄膜，而{111} + {100}混合取向的PZT薄膜的e_（31），f值较大。这些结果表明，在{100}取向的PZT膜中a轴取向是主要的。在这项研究中，我们证明了组合溅射方法能够精确评估压电和介电性能的成分依赖性。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue2期|p.09LA12.1-09LA12.4|共4页
  • 作者

    Kohei Tomioka; Fumiya Kurokawa; Ryuji Yokokawa; Hidetoshi Kotera; Kazuhiko Adachi; Isaku Kanno;

  • 作者单位

    Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan;

    Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan;

    Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan;

    Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan;

    Department of Mechanical Engineering, Kobe University, Kobe 657-8501, Japan;

    Department of Mechanical Engineering, Kobe University, Kobe 657-8501, Japan;

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