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首页> 外文期刊>Japanese journal of applied physics >Strain-Induced Electrical Properties of Lead Zirconate Titanate Thin Films on a Si wafer with Controlled Oxide Electrode Structure
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Strain-Induced Electrical Properties of Lead Zirconate Titanate Thin Films on a Si wafer with Controlled Oxide Electrode Structure

机译：具有受控氧化物电极结构的硅晶片上锆钛酸铅钛薄膜的应变诱导电学性能

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摘要

This paper shows the electrical properties of ferroelectric thin films with large compressive residual stress. In this study, the large compressive strain was applied to lead zirconate titanate (PZT) thin films by designing the bottom electrode structure on a Si wafer. The materials selected for the bottom electrode were lanthanum nickel oxide (LNO) and lanthanum strontium cobalt oxide [LSCO; (La_(0.5)Sr_(0.5)CoO_3]from the viewpoint of thermal expansion coefficients. As a result, the PZT thin films with morphotropic phase boundary (MPB) composition received compressive residual stress up to approximately 0.8 GPa from the bottom electrode even on a Si wafer. The compressive residual stress concomitantly increased with increasing LSCO layer thickness. In addition, the remanent polarization of the PZT thin films increased with increasing compressive residual stress.
机译：本文显示了具有大压缩残余应力的铁电薄膜的电性能。在这项研究中，通过在Si晶片上设计底部电极结构，将大的压缩应变应用于锆钛酸铅（PZT）薄膜。选择用于底部电极的材料是氧化镧镍（LNO）和氧化锶锶钴[LSCO; （La_（0.5）Sr_（0.5）CoO_3]从热膨胀系数的角度来看。结果，具有变质相界（MPB）成分的PZT薄膜即使在下电极上也从底部电极承受的压缩残余应力高达约0.8 GPa。硅晶片上，残余压应力随LSCO层厚度的增加而增加；此外，PZT薄膜的剩余极化强度随残余压应力的增加而增加。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue2期|p.09LA13.1-09LA13.4|共4页
  • 作者

    Tomoya Ohno; Masaaki Ishiduka; Takashi Arai; Hiroaki Yanagida; Takeshi Matsuda; Naonori Sakamoto; Naoki Wakiya; Hisao Suzuki;

  • 作者单位

    Department of Materials Science, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan;

    Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan;

    Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan;

    Department of Materials Science, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan;

    Department of Materials Science, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan;

    Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan;

    Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan;

    Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan;

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