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首页> 外文期刊>Japanese journal of applied physics >Polarization Properties of Bismuth Strontium Tantalate Ceramic Films Deposited by Aerosol Deposition Method
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Polarization Properties of Bismuth Strontium Tantalate Ceramic Films Deposited by Aerosol Deposition Method

机译：气溶胶沉积法沉积钽酸锶锶陶瓷薄膜的偏振特性

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摘要

We report aerosol deposition (AD) method for preparation of bismuth layer-structured ferroelectric thick films with enhanced ferroelectric andinsulating properties. Constitution phase, crystal structure, polarization and leakage current properties of SrBi_2Ta_2O_9 (SBTa) thick films with thickness of 2—4 μm were investigated. While obtained as-deposited SBTa films have slight c-axis grain orientation, the degree of orientation for the films annealed at higher than 1000℃ was the same as that for sintered bulks. Fracture cross-sectional scanning electron microscopy (SEM) images revealed that the as-deposited SBTa films on glass substrates had a fully dense microstructure. The low leakage current density (J) of less than 10~(-7)A/cm~2 at 1 MV/cm was observed for SBTa films annealed at less than 900 ℃, and the SBTa films annealed at 900 ℃ indicated a remanent polarization (P_r) of 5.7μC/cm~2, which is larger than that of sintered bulks (P_r of 4.7μC/cm~2) fabricated by conventional solid-state reaction using the same starting raw powder used for the AD method.
机译：我们报告气溶胶沉积（AD）方法制备具有增强的铁电和绝缘性能的铋层结构铁电厚膜。研究了厚度为2-4μm的SrBi_2Ta_2O_9（SBTa）厚膜的组成相，晶体结构，极化和漏电流特性。所获得的SBTa沉积薄膜的c轴晶粒取向较小，但在高于1000℃退火的薄膜的取向度与烧结块的取向度相同。断裂截面扫描电子显微镜（SEM）图像显示，玻璃基板上沉积的SBTa薄膜具有完全致密的微观结构。低于900℃退火的SBTa薄膜在1 MV / cm下的漏电流密度（J）小于10〜（-7）A / cm〜2，900℃退火的SBTa薄膜仍残留。极化（P_r）为5.7μC/ cm〜2，大于使用常规固相反应使用与AD方法相同的原料粉末制备的烧结块（P_r为4.7μC/ cm〜2）。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue2期|p.09LA17.1-09LA17.5|共5页
  • 作者

    Muneyasu Suzuki; Yoshiya Nishihara; Yoshiaki Uesu; Jun Akedo;

  • 作者单位

    Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan;

    Department of Pure and Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan;

    Department of Pure and Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan;

    Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan;

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