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首页> 外文期刊>Japanese journal of applied physics >Grain Size Effect on Dielectric Properties of Ba(Zr,Ti)O_3 Ceramics
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Grain Size Effect on Dielectric Properties of Ba(Zr,Ti)O_3 Ceramics

机译：晶粒尺寸对Ba（Zr，Ti）O_3陶瓷介电性能的影响

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摘要

We demonstrated the size effect on the dielectric properties of BaZr_xTi_(1-x)O_3 (x = 0.2 and 0.25) ceramics that showed relaxor behavior. Finegrained BaZr_xTi_(1-x)O_3 ceramics with micrometer- and nanometer-sized grains were fabricated by the two-step sintering method and aerosol deposition (AD) method, respectively. From the dielectric measurement, the permittivity of the BaZr_xTi_(1-x)O_3 ceramics markedly decreased with decreasing grain size below 3 μm. The permittivity of the BaZrxTii_xO3 nanograined ceramics decreased with increasing Zr content and was much smaller than the permittivity of the BaTiO_3 nanograined ceramics. These results indicated that the BaZr_xTi_(1-x)O_3 ceramics were more susceptible to the grain size effect than the pure BaTiO_3 ceramics. The dielectric responses to temperature and frequency suggested that the volume fraction of polar nanoregions decreased and the relaxor characteristics increased with decreasing grain size in BaZr_xTi_(1-x)O_3 ceramics.
机译：我们证明了尺寸对BaZr_xTi_（1-x）O_3（x = 0.2和0.25）陶瓷介电性能的影响，表现出弛豫性能。分别通过两步烧结法和气溶胶沉积（AD）法制备了具有微米级和纳米级晶粒的细晶粒BaZr_xTi_（1-x）O_3陶瓷。通过介电测量，BaZr_xTi_（1-x）O_3陶瓷的介电常数随着晶粒尺寸减小到3μm以下而显着降低。 BaZrxTii_xO3纳米晶陶瓷的介电常数随Zr含量的增加而降低，并且远小于BaTiO_3纳米晶陶瓷的介电常数。这些结果表明，BaZr_xTi_（1-x）O_3陶瓷比纯BaTiO_3陶瓷更容易受到晶粒尺寸效应的影响。介电常数对温度和频率的响应表明，随着BaZr_xTi_（1-x）O_3陶瓷尺寸的减小，极性纳米区域的体积分数减小，弛豫特性增加。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue2期|p.09LC04.1-09LC04.5|共5页
  • 作者

    Takuya Hoshina; Tsutomu Furuta; Takahiro Yamazaki; Hiroaki Takeda; Takaaki Tsurumi;

  • 作者单位

    Nano-Phononics Laboratory, Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Nano-Phononics Laboratory, Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Nano-Phononics Laboratory, Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Nano-Phononics Laboratory, Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Nano-Phononics Laboratory, Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

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