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首页> 外文期刊>Japanese journal of applied physics >Fabrication and Electrical Properties of Mn-Doped KNbO_3 Ceramics Synthesized from KHCO_3 as a Starting Material
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Fabrication and Electrical Properties of Mn-Doped KNbO_3 Ceramics Synthesized from KHCO_3 as a Starting Material

机译：以KHCO_3为原料合成的Mn掺杂KNbO_3陶瓷的制备及电学性能

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摘要

Potassium niobate-based ceramics with D.1 wt% MnCO_3, K_(1+x)NbO_3 + MnCO_3 0.1 wt% (KN10000x + Mn, x = 0.0000-0.0010), were fabricated using KHCO_3 powder as a starting material. The KN10000x + Mn ceramics were basically fabricated using a conventional ceramic fabrication process and MnCO_3 powders were added at the milling stage after the calcination. High density ratios above 95% were prepared for the wide compositional range of excess K amount for KN10000x + Mn ceramics. From these results, Mn ions are thought to act as a sintering aid for KN ceramics. Mn-doped KN10000x ceramics also showed high resisitivities of approximately 10_(12) Ωcm for the wide variety of x (10000x = 0-9). Moreover, the electromechanical coupling factors K_(33) for KN10000x + Mn had constant values of higher than 0.50.
机译：使用KHCO_3粉末作为起始原料制造了D.1 wt％MnCO_3，K_（1x）NbO_3 + MnCO_3 0.1 wt％（KN10000x + Mn，x = 0.0000-0.0010）的铌酸钾基陶瓷。 KN10000x + Mn陶瓷基本上使用常规陶瓷制造工艺制造，并且在煅烧后的研磨阶段添加MnCO_3粉末。对于KN10000x + Mn陶瓷的过量K含量的宽组成范围，制备了高于95％的高密度比。根据这些结果，认为Mn离子可作为KN陶瓷的烧结助剂。锰掺杂的KN10000x陶瓷对于多种x（10000x = 0-9）也显示出大约10_（12）Ωcm的高电阻率。此外，KN10000x + Mn的机电耦合系数K_（33）的常数大于0.50。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue2期|p.09LD05.1-09LD05.4|共4页
  • 作者

    Hajime Nagata; Nobutaka Yawata; Shigeki Sato; Tadashi Takenaka;

  • 作者单位

    Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

    Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

    Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

    Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

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