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首页> 外文期刊>Japanese journal of applied physics >Near-Infrared Photodetection of n-Type β-FeSi_2/Intrinsic Si/p-Type Si Heterojunctions at Low Temperatures
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Near-Infrared Photodetection of n-Type β-FeSi_2/Intrinsic Si/p-Type Si Heterojunctions at Low Temperatures

机译：n型β-FeSi_2/本征Si / p型Si异质结在低温下的近红外光电检测

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摘要

N-Type β-FeSi_2/intrinsic Si/p-type Si heterojunction photodiodes were fabricated by facing-targets direct-current sputtering, and their infrared photodetection properties were studied at low temperatures. The rectification current ratio at bias voltages of ±1 V and the ratio of the photocurrent to the dark leakage current were dramatically enhanced with a decrease in temperature. The specific detectivities at 300 and 50 K were estimated to be 3.8 × 10~9 and 8.9 × 10~(11) cm Hz_~(1/2)W~(-1), respectively. The enhanced detectivity upon cooling is attributed to the marked reduction in the dark leakage current. The insertion of the thin intrinsic Si layer slightly contributed to the suppression of the leakage current and the detectivity improvement. It was demonstrated that β-FeSi_2 is a potential material for Si-compatible near-infrared photodetectors.
机译：通过面对靶直流溅射制备了N型β-FeSi_2/本征Si / p型Si异质结光电二极管，并在低温下研究了其红外光电探测性能。随着温度的降低，在±1 V偏置电压下的整流电流比和光电流与暗漏电流的比显着提高。在300 K和50 K下的比探测率分别估计为3.8×10〜9和8.9×10〜（11）cm Hz_〜（1/2）W〜（-1）。冷却时增强的探测能力归因于暗漏电流的明显减少。薄的本征Si层的插入稍微有助于抑制漏电流和提高检测率。结果表明，β-FeSi_2是与Si相容的近红外光电探测器的潜在材料。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue3期|09MF02.1-09MF02.4|共4页
  • 作者

    Nathapom Promros; Kyohei Yamashita; Shota Izumi; Ryuhei Iwasaki; Mahmoud Shaban; Tsuyoshi Yoshitake;

  • 作者单位

    Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;

    Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;

    Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;

    Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;

    Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan,Department of Electrical Engineering, Aswan Faculty of Engineering, Aswan University, Aswan 81542, Egypt;

    Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;

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