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首页> 外文期刊>Japanese journal of applied physics >Non-Stoichiometric Effect in (K,Na)NbO_3-Based Perovskite Ceramics
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Non-Stoichiometric Effect in (K,Na)NbO_3-Based Perovskite Ceramics

机译：（K，Na）NbO_3基钙钛矿陶瓷的非化学计量效应

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摘要

We prepared Li_(0.04)(K_(0.5)Na_(0.5))_x(Nb_ySb_(0.06))O_3 ceramics using the conventional solid-state sintering method and investigated the non-stoichiometric effect on sintering behavior and electrical properties in these material systems. The deficiency of B-site ions gave rise to poor densities, while the densification was improved by adding excess Nb_2O_5. As the vacancy concentration in the A-site of the perovskite structure increased, the diffuse phase transition was enhanced and the transition temperature (T_(o-t)) was lowered. Furthermore, high deficiency in the A-site with x = 0.90 and y = 0.98 promoted a second phase formation. An increase of alkali cation vacancies led to large remnant polarization and enhanced a pinched hysteresis loop, while the remnant polarization decreased due to a second phase formation. The electro-mechanical coupling factors were significantly influenced by density and second phase formation, not non-stoichiometry, while dielectric constants were influenced by non-stoichiometry, not second phase formation.
机译：我们使用常规固态烧结方法制备了Li_（0.04）（K_（0.5）Na_（0.5））_ x（Nb_ySb_（0.06））O_3陶瓷，并研究了这些材料体系中非化学计量对烧结行为和电性能的影响。 。 B位离子的缺乏导致密度降低，而通过添加过量的Nb_2O_5改善了致密化。随着钙钛矿结构A位中空位浓度的增加，扩散相变增强，转变温度（T_（o-t））降低。此外，x = 0.90和y = 0.98的A位高缺陷促进了第二相的形成。碱性阳离子空位的增加导致大的残余极化并增强了收缩的磁滞回线，而残余极化由于第二相的形成而降低。机电耦合因子受密度和第二相形成的影响，而不是非化学计量，而介电常数受非化学计量作用的影响，而不是第二相的形成。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue3期|09MD09.1-09MD09.4|共4页
  • 作者

    Jeong-Ho Cho; Na-Ri Yeom; So-Jung Kwon; Young-Hun Jeong; Young-Jin Lee; Myoung-Pyo Chun; Joong-Hee Nam; Jong-Hoo Paik; Byung-lk Kim;

  • 作者单位

    Electronic Components Center, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea;

    Electronic Components Center, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea;

    Electronic Components Center, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea;

    Electronic Components Center, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea;

    Electronic Components Center, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea;

    Electronic Components Center, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea;

    Electronic Components Center, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea;

    Electronic Components Center, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea;

    Electronic Components Center, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea;

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