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首页> 外文期刊>Japanese journal of applied physics.Part 1.Regular papers & short notes >A 128 × 96 Pixel Stack-Type Color Image Sensor: Stack of Individual Blue-, Green-,and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin Film Transistor Readout Circuit
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A 128 × 96 Pixel Stack-Type Color Image Sensor: Stack of Individual Blue-, Green-,and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin Film Transistor Readout Circuit

机译：一个128×96像素的堆叠型彩色图像传感器：堆叠的单个蓝色，绿色和红色敏感有机光电导膜与ZnO薄膜晶体管读出电路集成在一起

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摘要

A color image was produced by a vertically stacked image sensor with blue (B)-, green (G)-, and red (R)-sensitive organic photoconductive films, each having a thin-film transistor (TFT) array that uses a zinc oxide (ZnO) channel to read out the signal generated in each organic film. The number of the pixels of the fabricated image sensor is 128 × 96 for each color, and the pixel size is 100 × 100μm~2. The current on/off ratio of the ZnO TFT is over 10~6, and the B-, G-, and R-sensitive organic photoconductive films show excellent wavelength selectivity. The stacked image sensor can produce a color image at 10 frames per second with a resolution corresponding to the pixel number. This result clearly shows that color separation is achieved without using any conventional color separation optical system such as a color filter array or a prism.
机译：通过垂直堆叠的图像传感器产生彩色图像，该图像传感器具有对蓝（B），对绿（G）和对红（R）敏感的有机光电导膜，每个有机光电导膜都具有使用锌的薄膜晶体管（TFT）阵列氧化锌（ZnO）通道读取在每个有机膜中产生的信号。每种颜色制作的图像传感器的像素数为128×96，像素大小为100×100μm〜2。 ZnO TFT的电流开/关比超过10〜6，并且B，G和R敏感有机光电导膜具有出色的波长选择性。堆叠图像传感器可以以每秒10帧的速度产生彩色图像，其分辨率对应于像素数。该结果清楚地表明，无需使用任何常规的分色光学系统，例如滤色器阵列或棱镜，就可以实现分色。

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    Hokuto Seo; Satoshi Aihara; Toshihisa Watabe; Hiroshi Ohtake; Toshikatsu Sakai; Misao Kubota; Norifumi Egami; Takahiro Hiramatsu; Tokiyoshi Matsuda; Mamoru Furuta; Takashi Hirao;

  • 作者单位

    NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan;

    NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan;

    NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan;

    NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan;

    NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan;

    NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan;

    NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan;

    Research Institute for Nanodevices, Kochi University of Technology, Kami, Kochi 782-8502, Japan;

    Research Institute for Nanodevices, Kochi University of Technology, Kami, Kochi 782-8502, Japan;

    Research Institute for Nanodevices, Kochi University of Technology, Kami, Kochi 782-8502, Japan;

    Research Institute for Nanodevices, Kochi University of Technology, Kami, Kochi 782-8502, Japan;

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