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首页> 外文期刊>Japanese journal of applied physics.Part 1.Regular papers & short notes >Sublattice Rotation of GaP Grown on 2°-Misoriented Si Substrate Using Metalorganic Vapor Phase Epitaxy
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Sublattice Rotation of GaP Grown on 2°-Misoriented Si Substrate Using Metalorganic Vapor Phase Epitaxy

机译：金属有机汽相外延生长在2°-失取向Si衬底上生长的GaP的亚晶格旋转

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QaP was grown on 2°- or 4°-misoriented Si substrates at 800 or 830 ℃ using metalorganic vapor phase epitaxy. Single-domain GaP layers were obtained on the 4°-misoriented substrates at both temperatures. Atomic force microscopy (AFM) revealed that the GaP surface feature was perpendicular to the misorientation direction. A single-domain GaP layer was achieved on the 2°-misoriented substrate only at 800 ℃. The GaP surface feature on the 2°-misoriented substrate rotated 90° with respect to that on the 4°-misoriented substrate, which indicates sublattice rotation. AFM revealed that domains elongating along the misorientation direction were found more in the initial growth stage on the 2°-misoriented substrate at 800 ℃ than on the 4° -misoriented substrate. The Si surface with double domains is responsible for the sublattice rotation. Transmission electron microscopy observation showed neither stacking faults nor threading dislocations in the GaP layer grown on the 2°-misoriented substrate at 800℃.
机译：QaP使用金属有机气相外延在800或830℃的2°或4°取向错误的Si衬底上生长。在两个温度下，在4°取向错误的基板上都获得了单畴GaP层。原子力显微镜（AFM）显示，GaP表面特征垂直于取向错误的方向。仅在800℃，在2°取向不正确的衬底上获得了单畴GaP层。 2°取向错误的基板上的GaP表面特征相对于4°取向错误的基板上的GaP表面特征旋转了90°，这表示亚晶格旋转。原子力显微镜（AFM）表明，在800℃下，在2°取向不正确的衬底上，沿着取向错误方向延伸的区域比在4°取向不正确的衬底上更多。具有双畴的Si表面负责亚晶格旋转。透射电子显微镜观察表明，在800℃下，在2°取向不正确的衬底上生长的GaP层中既没有堆垛层错，也没有线错位。

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    Yasushi Takano; Tatsuru Misaki; Tatsuya Takagi; Hiroki Yamada; Shunro Fuke;

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    Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan;

    Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan;

    Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan;

    Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan;

    Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan;

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