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首页> 外文期刊>Japanese journal of applied physics >Proposal for a Novel Bistable Device Using Two-Mode Competition between an In-Plane Laser Diode and a Vertical-Cavity Surface-Emitting Laser
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Proposal for a Novel Bistable Device Using Two-Mode Competition between an In-Plane Laser Diode and a Vertical-Cavity Surface-Emitting Laser

机译：使用面内激光二极管和垂直腔面发射激光器之间的双模竞争的新型双稳态设备的提案

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摘要

On the basis of mode competition, we propose a novel bistable device that has the potential to improve the degrees of freedom of optical input-output directions. Unlike the conventional mode competition in a single cavity, the proposed device uses two cavities that are cross-coupled between an in-plane laser diode (LD) and a vertical-cavity surface-emitting laser (VCSEL). We calculated rate equations using the cross-gain saturation model in order to elucidate the conditions under which the proposed device may have bistability. We also analyzed the static and dynamic responses. From the calculations, we found that the product of the optical confinement factor and the photon lifetime of the two lasers should have almost equal values. The results show that by coupling two cavities having similar characteristics, the switching characteristic becomes comparable to those of other reported bistable devices. In the case of static operations, switching powers of less than 2 mW and about 20fJ could be achieved; these are some of the smallest operational performances.
机译：在模式竞争的基础上，我们提出了一种新型的双稳态器件，该器件具有改善光输入输出方向的自由度的潜力。与单个腔中的常规模式竞争不同，所提出的设备使用两个腔，它们在平面内激光二极管（LD）和垂直腔表面发射激光器（VCSEL）之间交叉耦合。我们使用交叉增益饱和模型计算了速率方程，以阐明所提出的设备可能具有双稳态的条件。我们还分析了静态和动态响应。通过计算，我们发现两个激光器的光学限制因子和光子寿命的乘积应具有几乎相等的值。结果表明，通过耦合具有相似特性的两个腔，开关特性变得可与其他报道的双稳态器件相媲美。在静态操作的情况下，可以实现小于2 mW且约为20fJ的开关功率。这些是一些最小的操作性能。

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  • 来源
    《Japanese journal of applied physics》 |2011年第12期|p.122201.1-122201.6|共6页
  • 作者

    You Nomiyama; Kohroh Kobayashi; Hiroyuki Uenohara;

  • 作者单位

    Photonics Integration System Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Photonics Integration System Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Photonics Integration System Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

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