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首页> 外文期刊>Japanese journal of applied physics >Structural and Electrical Properties of Radio Frequency Sputtered HfTaO_x Films for High-k Gate Insulator
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Structural and Electrical Properties of Radio Frequency Sputtered HfTaO_x Films for High-k Gate Insulator

机译：高k栅绝缘子用射频溅射HfTaO_x薄膜的结构和电学性能

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摘要

Mixed HfTaO_x dielectric has been deposited by radio frequency (RF) magnetron co-sputtering of HfO_2 and Ta_2O_5 targets on Si substrates and with Pt bottom electrode for metal-oxide-semiconductor (MOS) and metal-insulator-metal (MINI) structures, respectively. HfTaO_x layers are characterized by X-ray photoelectron spectroscopy (XPS) to examine the chemical composition. Surface morphology and crystallinity of the deposited film were examined, using by atomic force microscopy (AFM) and grazing incidence X-ray diffraction (GIXRD), respectively. For both the structures electrical properties have been studied in detail. MOS capacitor capacitance-voltage (C-V) characteristics have been utilized to determine the interface trap density and trap distribution in the silicon band gap. A small capacitance non-linearity and low dissipation factor were found in the Pt/HfTaO_x/Pt MIM structures.
机译：混合HfTaO_x电介质已通过射频（RF）磁控管共溅射HfO_2和Ta_2O_5靶材在Si衬底上，并分别使用Pt底部电极形成金属氧化物半导体（MOS）和金属绝缘体金属（MINI）结构。 HfTaO_x层通过X射线光电子能谱（XPS）进行表征，以检查化学成分。分别通过原子力显微镜（AFM）和掠入射X射线衍射（GIXRD）检查了沉积膜的表面形态和结晶度。对于这两种结构，均已详细研究了其电性能。 MOS电容器的电容-电压（C-V）特性已用于确定界面陷阱密度和陷阱在硅带隙中的分布。在Pt / HfTaO_x / Pt MIM结构中发现了小的电容非线性和低损耗因子。

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  • 来源
    《Japanese journal of applied physics》 |2011年第10issue1期|p.101101.1-101101.5|共5页
  • 作者

    Mrinal K. Hota; Sandipan Mallik; Chandan K. Sarkar; Shikha Varma; Chinmay K. Maiti;

  • 作者单位

    Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302, India,Department of Electronics and Telecommunication Engineering, Jadavpur University,Jadavpur, Kolkata 700032, India;

    Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302, India;

    Department of Electronics and Telecommunication Engineering, Jadavpur University,Jadavpur, Kolkata 700032, India;

    Institute of Physics, Bhubaneswar 751005, India;

    Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302, India;

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