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首页> 外文期刊>Japanese journal of applied physics >Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane ln_(0.05)Ga_(0.95)N Epilayer Grown on a Freestanding GaN Substrate
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Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane ln_(0.05)Ga_(0.95)N Epilayer Grown on a Freestanding GaN Substrate

机译：时空分辨阴极荧光光谱技术的实现，用于研究在独立GaN衬底上生长的低位错密度m平面ln_（0.05）Ga_（0.95）N外延层中的局部载流子动力学

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摘要

Spatio-time-resolved cathodoluminescence (STRCL) spectroscopy is implemented to assess the local carrier dynamics in a 70-nm-thick, very low threading dislocation (TD) density, pseudomorphic m-plane lno.o5Gao.95N epilayer grown on a freestanding GaN substrate by metalorganic vapor phase epitaxy. Although TDs or stacking faults are absent, sub-micrometer-wide zonary patterns parallel to the c-axis and 2-μm-long-axis figure-of-8 patterns parallel to the a-axis are clearly visualized in the monochromatic cathodoluminescence intensity images. Because the STRCL measurement reveals very little spatial variation of low-temperature radiative lifetime, the considerable peak energy variation is interpreted to originate from nonidentical In-incorporation efficiency for the growing surfaces exhibiting various miscut angles. The figure-of-8 patterns are ascribed to originate from the anisotropic, severe m-plane tilt mosaic along the a-axis of the GaN substrate, and the zonary patterns may originate from the m-plane tilt mosaic along the c-axis.
机译：时空分辨阴极荧光（STRCL）光谱用于评估在独立GaN上生长的70 nm厚，极低穿线位错（TD）密度，拟晶m平面lno.o5Gao.95N外延层中的局部载流子动力学衬底通过金属有机气相外延形成。尽管不存在TD或堆垛层错，但在单色阴极发光强度图像中可以清楚地看到与c轴平行的亚微米级带状图案和与a轴平行的2μm长轴8字形图案。因为STRCL测量显示出低温辐射寿命的空间变化很小，所以可观的峰值能量变化被认为是由于表现出各种错切角的生长表面的掺入效率不同所致。 8位图形被归因于沿着GaN衬底的a轴的各向异性，严重的m面倾斜镶嵌，而纬向图形可能源自于沿c轴的m平面倾斜镶嵌。

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  • 来源
    《Japanese journal of applied physics》 |2011年第11issue1期|p.000037-000041|共5页
  • 作者

    Munehito Kagaya; Pierre Corfdir; Jean-Daniel Ganiere; BenoTt Deveaud-Pledran; Nicolas Grandjean; Shigefusa F. Chichibu;

  • 作者单位

    CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-85/7, Japan;

    CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-85/7, Japan,;

    CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-85/7, Japan,;

    CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-85/7, Japan;

    CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-85/7, Japan,;

    CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-85/7, Japan;

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