Graphene/Graphite-Coated SiC Nanowires Grown by Metal-Organic Chemical Vapor Deposition in One Step

Hideo Kohno; Kazuki Yagi; Hirohiko Niioka

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Graphene/Graphite-Coated SiC Nanowires Grown by Metal-Organic Chemical Vapor Deposition in One Step

机译：金属有机化学气相沉积一步法生长石墨烯/石墨包覆的SiC纳米线

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Graphene/graphite-coated SiC nanowires are fabricated from diethylsilane or divinyldimethylsilane by Fe-assisted metal-organic chemical vapor deposition. When diethylsilane is used, a few layers of graphene are formed, while 30-40-nm-thick graphite is formed from divinyldimethylsilane,

机译：石墨烯/石墨包覆的SiC纳米线是由二乙基硅烷或二乙烯基二甲基硅烷通过铁辅助的金属有机化学气相沉积制成的。使用二乙基硅烷时，会形成几层石墨烯，而由二乙烯基二甲基硅烷会形成30-40 nm厚的石墨，

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《Japanese journal of applied physics.Part 1.Regular papers & short notes》 |2011年第1issue1期|p.018001.1-018001.2|共2页
作者
Hideo Kohno; Kazuki Yagi; Hirohiko Niioka;
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Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043, Japan;

Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043, Japan;

Institute for NanoScience Design, Osaka University, Toyonaka, Osaka 560-8531, Japan;

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1. Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal-organic chemical vapor deposition [J] . Pengcheng Tao, Hongwei Liang, Dongsheng Wang, Materials science in semiconductor processing . 2014,第Null期

机译：通过插入通过有机金属化学气相沉积法在6H-SiC衬底上生长的薄SiNx中间层而合成的无裂纹AlGaN / GaN分布布拉格反射器
2. SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors [J] . Boisselier G., Maury F., Schuster F. Surface & Coatings Technology . 2013,第Null期

机译：使用单一来源的金属有机前体通过液体喷射化学气相沉积法生长的SiC涂层
3. High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown AI_2O_3 gate insulator [J] . S. Hino, T. Hatayama, J. Kato, Applied Physicsletters . 2008,第18期

机译：具有低温金属有机化学气相沉积生长的AI_2O_3栅绝缘体的高沟道迁移率4H-SiC金属氧化物半导体场效应晶体管
4. SiC nanowires grown on 4H-SiC substrates by chemical vapor deposition [C] . Bharat Krishnan, Siva Kotamraju, Siddarth Sundaresan, Silicon carbide and related materials 2009 . 2010

机译：通过化学气相沉积法在4H-SiC衬底上生长的SiC纳米线
5. Epitaxial oxide thin films grown by solid source metal-organic chemical vapor deposition. [D] . Lu, Zihong. 1995

机译：通过固体源金属有机化学气相沉积法生长的外延氧化物薄膜。
6. Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC [O] . Laiyuan Chong, Hui Guo, Yuming Zhang, 2019

机译：SiC化学气相沉积生长外延石墨烯晶界应变松弛的拉曼研究
7. SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors [O] . Boisselier Guilhaume, Maury Francis, Schuster Frédéric 2013

机译：使用单一来源的金属有机前体通过液体喷射化学气相沉积法生长的SiC涂层

Graphene/Graphite-Coated SiC Nanowires Grown by Metal-Organic Chemical Vapor Deposition in One Step

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