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首页> 外文期刊>Japanese journal of applied physics.Part 1.Regular papers & short notes >Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric
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Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric

机译：超薄氧氮化锗栅极电介质的热稳定性和改善的电性能

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摘要

Robustness of ultrathin germanium oxynitrides (GeON) formed by plasma nitridation of thermal oxides (GeO_2) on Ge(100) substrates [K. Kutsuki et al.: Appl. Phys. Lett. 95 (2009) 022102] was investigated by means of physical and electrical measurements. The decomposition temperature of a 3.7-nm-thick GeON layer was found to increase up to 550℃ by plasma nitridation, which was about 100℃ higher than that of pure GeO_2. While the insulating property of GeON dielectrics begins to degrade just below the decomposition temperature, i.e., at around 540℃, thermal treatment up to 520℃ effectively improves the electrical properties of the ultrathin GeON dielectrics, such as recovery of bulk defects and quite low interface state density (D_(it)) even for the ultrathin gate dielectrics. The advantage of GeON dielectrics in designing a fabrication process for Ge-based devices and the physical origins of the improved properties will be discussed.
机译：Ge（100）衬底上热氧化物（GeO_2）的等离子体氮化形成的超薄氮氧化锗（GeON）的坚固性[K. Kutsuki et al.：Appl。物理来吧95（2009）022102]通过物理和电气测量进行了研究。发现通过等离子体氮化，厚度为3.7nm的GeON层的分解温度提高到550℃，比纯GeO_2高约100℃。当GeON电介质的绝缘性能刚好在分解温度以下（即540℃左右）开始下降时，高达520℃的热处理有效地改善了超薄GeON电介质的电性能，例如，恢复了体缺陷和相当低的界面态密度（D_（it））甚至对于超薄栅极电介质也是如此。将讨论GeON电介质在设计基于Ge的器件的制造工艺中的优势以及性能提高的物理原因。

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    《Japanese journal of applied physics.Part 1.Regular papers & short notes》 |2011年第1issue1期|p.010106.1-010106.6|共6页
  • 作者

    Katsuhiro Kutsuki; Iori Hideshima; Gaku Okamoto; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe;

  • 作者单位

    Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan,Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan,Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

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