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首页> 外文期刊>Japanese journal of applied physics.Part 1.Regular papers & short notes >Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group Ⅲ Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux
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Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group Ⅲ Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux

机译：硅控制射频放电模式和氮通量辐照对Ⅲ族氮化物等离子体辅助分子束外延生长的改善

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摘要

A radio frequency inductively coupled plasma (rf-ICP) nitrogen discharge was investigated to improve group Ⅲ nitride growth on Si substrates. Two modes of the rf-ICP discharge, low brightness (LB) and high brightness (HB) discharges, were successfully controlled through mode transition. Direct irradiation and indirect irradiation of nitrogen atoms were applied for the growth of group III nitrides. As an application of indirect irradiation of nitrogen atoms, the growth of β-Si-3N-4 using interface reaction epitaxy (IRE) was studied. As applfcations of direct irradiation of nitrogen atoms, activity modulation migration-enhanced epitaxy (AM-MEE) and plasma-assisted molecular beam epitaxy (PA-MBE), which are atomic layer epitaxy (ALE) methods, are demonstrated. These growth systems operate to realize a single-growth process from a Si substrate to an AIN or GaN epitaxial layer, i.e., through preparation of a double buffer (DBL) layer of AIN/β-Si-3N-4/Si after the growth of IRE β-Si-3N-4 and IRE AIN. The electron emission due to the self-ionization of nitrogen atoms on a negatively biased electrode is demonstrated to measure in situ direct and indirect nitrogen atom fluxes during the growth.
机译：研究了射频感应耦合等离子体（rf-ICP）氮放电，以改善硅衬底上Ⅲ族氮化物的生长。通过模式转换成功控制了rf-ICP放电的两种模式，即低亮度（LB）和高亮度（HB）放电。氮原子的直接辐照和间接辐照被用于Ⅲ族氮化物的生长。作为氮原子间接照射的一种应用，研究了利用界面反应外延（IRE）生长β-Si-3N-4的方法。作为直接辐照氮原子的应用，证明了原子层外延（ALE）方法的活性调节迁移增强外延（AM-MEE）和等离子辅助分子束外延（PA-MBE）。这些生长系统用于实现从Si衬底到AIN或GaN外延层的单生长过程，即通过在生长后准备AIN /β-Si-3N-4/ Si的双缓冲（DBL）层来实现IREβ-Si-3N-4和IRE AIN。已证明，由于负电极上氮原子的自电离，电子发射可测量生长过程中的原位直接和间接氮原子通量。

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