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首页> 外文期刊>Japanese journal of applied physics >Electronic and Optical Properties of Indium Zinc Oxide Thin Films Prepared by Using Nanopowder Target
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Electronic and Optical Properties of Indium Zinc Oxide Thin Films Prepared by Using Nanopowder Target

机译：纳米粉靶制备氧化铟锌薄膜的电子和光学性质

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摘要

Indium zinc oxide (IZO) films were deposited on glass substrates using the rf-magnetron sputtering method and a powder target made up of nanoparticles with a size less than 100nm. In this study, the optical, structural, and electrical properties of the IZO films deposited using a nanopowder target compared with those of the IZO films deposited using a micropowder target made up of microparticles with a size greater than 30μm were examined. The IZO films deposited using nanopowder at room temperature were amorphous and showed a low resistivity of 4.5×10~(-4)Ω·cm and a high transmittance over an average of 85% in the visible range, indicating that these films showed more enhanced properties than the IZO film deposited using micropowder. The enhanced properties of the IZO film prepared with nanopowder were considered to be caused by the marked improvement in packing density with increases in refractive index and surface roughness from atomic force microscopy (AFM) images due to the powder target consisting of nanoparticles.
机译：使用射频磁控溅射方法和由尺寸小于100nm的纳米颗粒组成的粉末靶材，将氧化铟锌（IZO）膜沉积在玻璃基板上。在这项研究中，与使用由大于30μm的微粒组成的微粉靶沉积的IZO膜相比，研究了使用纳米粉靶沉积的IZO膜的光学，结构和电学性质。在室温下使用纳米粉沉积的IZO薄膜是非晶态的，在可见光范围内平均电阻率低至4.5×10〜（-4）Ω·cm，平均透射率高达85％，显示出更高的透射率。性能优于使用微粉沉积的IZO膜。认为由纳米粉末制备的IZO膜的性能增强是由于粉末密度由纳米粒子组成，因此通过原子力显微镜（AFM）图像获得的堆积密度随折射率和表面粗糙度的增加而显着提高，从而导致了填充率的显着提高。

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  • 来源
    《Japanese journal of applied physics》 |2011年第4issue1期|p.045801.1-045801.5|共5页
  • 作者

    Hwa-Min Kim; Kang Bae; Sunyoung Sohn;

  • 作者单位

    Department of Electronics Engineering, Catholic University of Daegu, Gyeongsan, Gyeongbuk 712-702, Republic of Korea;

    Department of Electronics Engineering, Catholic University of Daegu, Gyeongsan, Gyeongbuk 712-702, Republic of Korea;

    Department of Electronics Engineering, Catholic University of Daegu, Gyeongsan, Gyeongbuk 712-702, Republic of Korea;

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