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首页> 外文期刊>Japanese journal of applied physics >Temperature-Compensated Nano-Ampere Current Reference Circuit with Subthreshold Metal-Oxide-Semiconductor Field-Effect Transistor Resistor Ladder
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Temperature-Compensated Nano-Ampere Current Reference Circuit with Subthreshold Metal-Oxide-Semiconductor Field-Effect Transistor Resistor Ladder

机译：具有亚阈值金属氧化物半导体场效应晶体管电阻梯级的温度补偿纳米安培电流参考电路

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摘要

We have developed a low-power current reference circuit with little temperature dependence for micro-power LSIs in a 0.35-|xm standard complementary metal-oxide-semiconductor (CMOS) process. The proposed circuit consists of a bias-voltage subcircuit, a current-source subcircuit, and an offset-voltage generation (OVG) subcircuit. The OVG subcircuit consists of a subthreshold MOS resistor ladder. It is used to generate a small offset voltage that is independent of temperature and compensates for the temperature dependence of the reference current. Experimental results demonstrated that the proposed circuit generated a 95-nA reference current and that the total power dissipation was 598 nW. The temperature coefficient of the reference current can be kept within 523ppm/℃ at temperatures from -20 to 100℃.
机译：我们已经以0.35- | xm标准互补金属氧化物半导体（CMOS）工艺为微功率LSI开发了一种温度依赖性很小的低功率电流基准电路。所提出的电路包括一个偏置电压子电路，一个电流源子电路和一个偏置电压产生（OVG）子电路。 OVG子电路由一个亚阈值MOS电阻梯形组成。它用于产生与温度无关的小偏移电压，并补偿参考电流的温度依赖性。实验结果表明，该电路产生了95nA的参考电流，总功耗为598nW。在-20至100℃的温度下，参考电流的温度系数可以保持在523ppm /℃之内。

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  • 来源
    《Japanese journal of applied physics》 |2011年第4issue2期|p.04DE08.1-04DE08.6|共6页
  • 作者

    Yuji Osaki; Tetsuya Hirose; Nobutaka Kuroki; Masahiro Numa;

  • 作者单位

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University,1-1 Rokkodai, Nada, Kobe 657-8501, Japan;

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University,1-1 Rokkodai, Nada, Kobe 657-8501, Japan;

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University,1-1 Rokkodai, Nada, Kobe 657-8501, Japan;

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University,1-1 Rokkodai, Nada, Kobe 657-8501, Japan;

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