Structural Changes Caused by Quenching of lnAs/GaAs(001) Quantum Dots

Masamitu Takahasi; Seiji Fujikawa

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Structural Changes Caused by Quenching of lnAs/GaAs(001) Quantum Dots

机译：lnAs / GaAs（001）量子点淬火引起的结构变化

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Self-assembled lnAs/GaAs(001) quantum dot structures before and after quenching were investigated by in situ X-ray diffraction to assess the effects of quenching. Before quenching, quantums dots were uniform in size so that the shape and internal lattice constant distribution of a quantum dot were quantitatively determined on the basis of three-dimensional X-ray intensity mapping. X-ray measurements after quenching revealed that the quantum dot size showed a bimodal distribution as a result of the proliferation of dislocated islands during quenching. A formula to describe the X-ray diffraction from dislocated islands with a large size distribution is presented. The cooling rate between 20 and 40 K/min was found to have little effect on the structures of quenched quantum dots.

机译：通过原位X射线衍射研究淬灭前后自组装的lnAs / GaAs（001）量子点结构，以评估淬灭的效果。在淬灭之前，量子点的大小是均匀的，从而基于三维X射线强度映射来定量确定量子点的形状和内部晶格常数分布。淬火后的X射线测量表明，由于淬火过程中位错岛的扩散，量子点尺寸显示出双峰分布。提出了描述从大尺寸分布的错位岛上进行X射线衍射的公式。发现在20和40K / min之间的冷却速率对淬灭的量子点的结构几乎没有影响。

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《Japanese journal of applied physics》 |2011年第4issue2期|p.04DH06.1-04DH06.5|共5页
作者
Masamitu Takahasi; Seiji Fujikawa;
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作者单位

Quantum Beam Science Directorate, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan;

Quantum Beam Science Directorate, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan;

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1. Effects of thin GaAs insertion layer on lnAs/(lnGaAs)/lnP(001) quantum dots grown by metalorganic chemical vapor deposition [J] . Kwangmin Park, Pilkyung Moon, Eungjin Ahn, Applied Physics Letters . 2005,第22期

机译：薄GaAs插入层对金属有机化学气相沉积法生长lnAs /（InGaAs）/ lnP（001）量子点的影响
2. In-situ laser nano-patterning for ordered lnAs/GaAs(001) quantum dot growth [J] . Zhang Wei, Shi Zhenwu, Huo Dayun, Applied Physics Letters . 2018,第15期

机译：原位激光纳米图案化有序lnAs / GaAs（001）量子点生长
3. Self-Assembled lnAs Lateral Quantum Dot Molecules Growth on (001) GaAs by Thin-Capping-and-Regrowth MBE Technique [J] . S. Suraprapapich, S. Thainoi, S. Kanjanachuchai, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2007,第1期

机译：薄上限和再生长MBE技术在（001）GaAs上自组装lnAs横向量子点分子的生长
4. Self-Assembled lnAs Lateral Quantum Dot Molecules Growth on (001) GaAs by Thin-Capping-and-Regrowth MBE Technique [C] . S. Suraprapapich, S. Thainoi, S. Kanjanachuchai, China International Conference on Nanoscience and Technology . 2007

机译：通过薄封装和再生MBE技术自组装LNA横向量子点分子（001）GaAs上的生长
5. Growth control, structural characterization, and electronic structure of Stranski-Krastanow indium arsenide/gallium arsenide(001) quantum dots. [D] . Mukhametzhanov, Ildar Maksutovich. 2002

机译：Stranski-Krastanow砷化铟/砷化镓（001）量子点的生长控制，结构表征和电子结构。
6. Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces [O] . Alexander Milekhin, Nikolay Yeryukov, Alexander Toropov, 2012

机译：在（001）和（311）B GaAs表面上生长的InAs / AlAs量子点超晶格的拉曼散射
7. Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy [O] . Ulloa, JM José Maria), Anantathanasarn, S Sanguan, Veldhoven, van, PJ René, 2008

机译：截面扫描隧道显微镜研究超薄砷化镓中间层对InAs / InGaAsP / InP（001）量子点结构性能的影响
8. Adatom condensation and quantum dot sizes in InGaAs/GaAs (001) [R] . Leon, R., Wellman, J., Liao, X. Z., 2000

机译：InGaas / Gaas（001）中的原子缩合和量子点尺寸

Structural Changes Caused by Quenching of lnAs/GaAs(001) Quantum Dots

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