Source/Drain Engineering for ln_(0.7)Ga_(0.3)As N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction

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• 来源
  《Japanese journal of applied physics》 |2011年第4issue2期|p.04DF01.1-04DF01.4|共4页
• 作者

  Xiao Gong; Hock-Chun Chin; Shao-Ming Koh; Lanxiang Wang; Ivana; Zhu Zhu; Benzhong Wang; Ching Kean Chia; Yee-Chia Yeo;

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• 作者单位

  Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576,NUS Graduate School of Integrative Sciences and Engineering, National University of Singapore, Singapore 117456;

  Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576;

  Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576;

  Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576,NUS Graduate School of Integrative Sciences and Engineering, National University of Singapore, Singapore 117456;

  Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576,NUS Graduate School of Integrative Sciences and Engineering, National University of Singapore, Singapore 117456;

  Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576;

  Institute of Materials Research and Engineering, Agency for Science Technology and Research, Singapore 117602;

  Institute of Materials Research and Engineering, Agency for Science Technology and Research, Singapore 117602;

  Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576,NUS Graduate School of Integrative Sciences and Engineering, National University of Singapore, Singapore 117456;

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• 正文语种 eng
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