Power Dependent Micro-Photoluminescence of Green-lnGaN/GaN Multiple Quantum Wells

Sang-Youp Yim; Joon Heon Kim; Mun Seok Jeong; Seung-Han Park; Jongmin Lee

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Power Dependent Micro-Photoluminescence of Green-lnGaN/GaN Multiple Quantum Wells

机译：Green-InGaN / GaN多量子阱的功率相关微光致发光

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We report the excitation-power-depertdent micro-photoluminescence (micro-PL) of green-lnGaN/GaN multiple quantum wells grown on a sapphire substrate. By using a micro-PL imaging technique based on laser scanning confocal microscopy, bright luminescent centers emitting blue, green, and yellow bands were clearly resolved at a low excitation power. With increasing power, in addition, the strong blue-shift of PL bands from all luminescent centers was observed, with a much stronger blue-shift for initial yellow band. We show that the band-tail filling model qualitatively agrees well with our microscopic study revealing the origin of apparent bandwidth-narrowing in macroscopic ensemble PL spectra.

机译：我们报告了在蓝宝石衬底上生长的绿色InGaN / GaN多量子阱的激发功率依赖性微光致发光（micro-PL）。通过使用基于激光扫描共聚焦显微镜的micro-PL成像技术，可以在低激发功率下清楚地分辨出发出蓝色，绿色和黄色谱带的明亮发光中心。另外，随着功率的增加，观察到来自所有发光中心的PL带的强蓝移，而对于初始黄色带的蓝移强得多。我们表明，带尾填充模型在质量上与我们的微观研究非常吻合，从而揭示了宏观整体PL谱中表观带宽变窄的起源。

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《Japanese journal of applied physics》 |2011年第5issue1期|p.050204.1-050204.3|共3页
作者
Sang-Youp Yim; Joon Heon Kim; Mun Seok Jeong; Seung-Han Park; Jongmin Lee;
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leejm@gist.ac.kr;

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1. Micro-photoluminescence Mapping of Localized Luminescent Centers in Blue and Green InGaN/GaN Multiple Quantum Wells [J] . Yim SY, Kim JH, Jeong MS, Journal of the Korean Physical Society . 2011,第6期

机译：蓝色和绿色InGaN / GaN多量子阱中局部发光中心的微光致发光映射。
2. Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well [J] . Yang L, Motohisa J, Tomioka K, Nanotechnology . 2008,第27期

机译：具有单个InGaAs / GaAs量子阱的六角形纳米柱的制造和取决于激发功率密度的微光致发光
3. Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN [J] . G. A. Garrett, H. Shen, M. Wraback, Physica Status Solidi. A, Applied Research . 2005,第5期

机译：在横向过度生长的a平面和c平面GaN上变化阱宽度的GaN / AlGaN多量子阱的强度相关的时间分辨光致发光研究
4. Excitation-power-density-dependent micro-photoluminescence from selective-area-grown hexagonal nanopillars with single InGaAs/GaAs quantum well on the GaAs (111)B substrate [C] . Lin Yang, Junichi Motohisa, Takashi Fukui IEEE Conference on Nanotechnology . 2007

机译：在GaAs（111）B衬底上用单个InGaAs / GaAs量子阱具有选择性区域生长的六方纳米粒子的激发 - 功率密度依赖性微光致发光。
5. Growth and Behaviors of Inn/Gan Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy [D] . Li, Chen. 2018

机译：等离子体辅助分子束外延的Inn / GaN多量子孔的生长和行为
6. Epitaxial Growth of GaN Core and InGaN/GaN MultipleQuantum Well Core/Shell Nanowires on a Thermally Conductive BerylliumOxide Substrate [O] . MuhammadAli Johar, Aadil Waseem, Mostafa Afifi Hassan, 2020

机译：GaN核和InGaN / GaN多重外延生长导热铍上的量子阱核/壳纳米线氧化物基板
7. Measurement of the Emission Lifetime of a GaN Interface Fluctuation Quantum Dot by Power Dependent Single Photon Dynamics (Phys. Status Solidi A 9∕2018) [O] . Kang Gao, Mark Holmes, Munetaka Arita, 2018

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Power Dependent Micro-Photoluminescence of Green-lnGaN/GaN Multiple Quantum Wells

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