Mechanism Verification of Electrochemical Migration of Fine Cu Wiring

Daiki Komatsu; Nobuya Takahashi; Toshiki Furutani; Ramesh Kumar Bhandari; Kenji Sato; Naoyuki Jinbo; Takashi Kariya

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Mechanism Verification of Electrochemical Migration of Fine Cu Wiring

机译：细铜线电化学迁移的机理验证

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The mechanisms of electrochemical migration and consequent insulation failure in fine-pitch Cu wiring (line/space = 3μm/3μm) are investigated. A model in which the migration takes place in the presence of water in a phenol-based resin-resin interface between biased Cu traces is proposed. Replacing the bottom resin layer by a SiN layer is found to be an effective method of considerably enhancing the leakage characteristics.

机译：研究了细间距铜导线（线/间距=3μm/3μm）中电化学迁移的机理以及随之而来的绝缘破坏。提出了一种模型，在该模型中，在有水的情况下，在偏置的Cu迹线之间的酚基树脂-树脂界面中发生了迁移。发现用SiN层代替底部树脂层是显着增强泄漏特性的有效方法。

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《Japanese journal of applied physics》 |2011年第5issue2期|p.05EA10.1-05EA10.2|共2页
作者
Daiki Komatsu; Nobuya Takahashi; Toshiki Furutani; Ramesh Kumar Bhandari; Kenji Sato; Naoyuki Jinbo; Takashi Kariya;
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Electronic Circuits Development Division R&D Operation IBIDEN Co., Ltd., Ogaki, Gifu 501-0695, Japan;

Electronic Circuits Development Division R&D Operation IBIDEN Co., Ltd., Ogaki, Gifu 501-0695, Japan;

Electronic Circuits Development Division R&D Operation IBIDEN Co., Ltd., Ogaki, Gifu 501-0695, Japan;

Electronic Circuits Development Division R&D Operation IBIDEN Co., Ltd., Ogaki, Gifu 501-0695, Japan;

Electronic Circuits Development Division R&D Operation IBIDEN Co., Ltd., Ogaki, Gifu 501-0695, Japan;

Electronic Circuits Development Division R&D Operation IBIDEN Co., Ltd., Ogaki, Gifu 501-0695, Japan;

Electronic Circuits Development Division R&D Operation IBIDEN Co., Ltd., Ogaki, Gifu 501-0695, Japan;

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Mechanism Verification of Electrochemical Migration of Fine Cu Wiring

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