Growth of lrO_x-SnO_x Films Deposited by Reactive Sputtering

Shun Harada; Kenji Yoshino; Syuji Fukudome; Yoshihiko Kawano; Fumihiro Sei

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Growth of lrO_x-SnO_x Films Deposited by Reactive Sputtering

机译：反应溅射沉积lrO_x-SnO_x薄膜的生长

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IrO_x-SnO_x thin films were deposited on a glass substrate by reactive sputtering using two types of SnO_2 and Ir targets between room temperature (RT) and 200℃. The X-ray diffraction pattern indicates crystallization at 100℃, and identifies IrO_x-SnO_x thin films as tetragonal rutile type structures. The IrO_x-SnO_x thin films also exhibit low average transmittance and resistivity at 100℃.

机译：通过在室温（RT）和200℃之间使用两种类型的SnO_2和Ir靶，通过反应溅射将IrO_x-SnO_x薄膜沉积在玻璃基板上。 X射线衍射图谱表明在100℃晶化，并将IrO_x-SnO_x薄膜鉴定为四方金红石型结构。 IrO_x-SnO_x薄膜在100℃时的平均透射率和电阻率也很低。

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《Japanese journal of applied physics》 |2011年第5issue3期|p.05FB14.1-05FB14.2|共2页
作者
Shun Harada; Kenji Yoshino; Syuji Fukudome; Yoshihiko Kawano; Fumihiro Sei;
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作者单位

Department of Electrical and Electronic Engineering, University of Miyazaki, Miyazaki 889-2192, Japan;

Department of Electrical and Electronic Engineering, University of Miyazaki, Miyazaki 889-2192, Japan;

Essential Technology Department, Honda Lock Mfg. Co., Ltd., Miyazaki 880-0923, Japan;

Essential Technology Department, Honda Lock Mfg. Co., Ltd., Miyazaki 880-0923, Japan;

Essential Technology Department, Honda Lock Mfg. Co., Ltd., Miyazaki 880-0923, Japan;

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Growth of lrO_x-SnO_x Films Deposited by Reactive Sputtering

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