Optical Absorption Properties of BaSi_2 Epitaxial Films Grown on a Transparent Silicon-on-lnsulator Substrate Using Molecular Beam Epitaxy

Katsuaki Toh; Takanobu Saito; Takashi Suemasu

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Optical Absorption Properties of BaSi_2 Epitaxial Films Grown on a Transparent Silicon-on-lnsulator Substrate Using Molecular Beam Epitaxy

机译：分子束外延在绝缘子上透明硅衬底上生长的BaSi_2外延膜的光吸收特性

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We have grown 100-nm-thick BaSi_2 films on transparent silicon-on-insulator (SOI) substrates using molecular beam epitaxy, for optical absorption measurements. The SOI substrate has a 0.7-nm-thick (111)-oriented Si layer on top of a fused silica substrate. Reflection high-energy electron diffraction and 8-28 X-ray diffraction patterns showed that a-axis-oriented BaSi_2 layers were grown epitaxially. The absorption spectrum of the film measured in a transmission configuration at room temperature revealed that BaSi_2 has a large absorption coefficient of 3 × 10~4cm~(-1) at 1.5eV and an indirect optical absorption edge of 1.34 eV.

机译：我们已经使用分子束外延技术在透明绝缘体上硅（SOI）衬底上生长了100 nm厚的BaSi_2膜，用于光吸收测量。 SOI基板在熔融石英基板的顶部具有0.7纳米厚（111）取向的Si层。反射高能电子衍射和8-28 X射线衍射图表明，外延生长了a轴取向的BaSi_2层。在室温下以透射配置测量的薄膜吸收光谱表明，BaSi_2在1.5eV处具有3×10〜4cm〜（-1）的大吸收系数，间接光吸收边为1.34 eV。

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《Japanese journal of applied physics》 |2011年第6issue1期|p.068001.1-068001.2|共2页
作者
Katsuaki Toh; Takanobu Saito; Takashi Suemasu;
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Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;

Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;

Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan,Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0075, Japan;

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Optical Absorption Properties of BaSi_2 Epitaxial Films Grown on a Transparent Silicon-on-lnsulator Substrate Using Molecular Beam Epitaxy

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