Sulfurization Growth of CulnS_2 Thin Film Using Ditertiarybutylsulfide as a Less Hazardous Source

Mutsumi Sugiyama; Chika Fujiwara; Ryuki Shoji; Shigefusa Chichibu

首页> 外文期刊>Japanese journal of applied physics >Sulfurization Growth of CulnS_2 Thin Film Using Ditertiarybutylsulfide as a Less Hazardous Source

【24h】

Sulfurization Growth of CulnS_2 Thin Film Using Ditertiarybutylsulfide as a Less Hazardous Source

机译：二叔丁基硫醚作为危险源的CulnS_2薄膜的硫化生长

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Ditertiarybutylsulfide [(t-C_4H_9)_2S: DTBS] was shown to be a promising, less hazardous alternative source for the sulfurization growth of CulnS_2 films. Single-phase, polycrystalline CulnS_2 films were formed in only 15min when the sulfurization temperature was 575℃. Photoluminescence spectra at a low temperature were dominated by characteristic emission bands at 1.34 and 1.37 eV, indicating that the films are a suitable material as a photoabsorbing layer of CulnS_2-based solar cells. These results represent the first step toward realizing a solar cell using a CulnS_2 film grown by sulfurization using an organometallic source and conventional, large-scale equipment.

机译：二叔丁基硫化物[（t-C_4H_9）_2S：DTBS]被证明是CulnS_2薄膜硫化生长的一种有前途，危害较小的替代来源。当硫化温度为575℃时，仅15min即可形成单相多晶CulnS_2薄膜。低温下的光致发光光谱以1.34和1.37 eV处的特征发射带为主，表明该膜是适合作为CulnS_2基太阳能电池光吸收层的材料。这些结果代表了通过使用有机金属源和常规的大型设备通过硫化而生长的CuInS_2薄膜实现太阳能电池的第一步。

著录项

来源
《Japanese journal of applied physics》 |2011年第6issue1期|p.065503.1-065503.3|共3页
作者
Mutsumi Sugiyama; Chika Fujiwara; Ryuki Shoji; Shigefusa Chichibu;
展开▼
作者单位

Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Photoluminescence Study of Defect Levels in CulnS_2 Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide [J] . Xiaohui Liu, Chika Fujiwara, Xiaoming Dou, Japanese journal of applied physics . 2012,第3ISSue1期

机译：二叔丁基硫磺硫化CulnS_2薄膜中缺陷水平的光致发光研究
2. Preparation of CuInS_2 thin films by sulfurization using ditertiarybutylsulfide [J] . Xiaohui Liu, Zhengxin Liu, Fanying Meng, Thin Solid Films . 2014,第maya2期

机译：二叔丁基硫醚硫化法制备CuInS_2薄膜
3. Photoluminescence Study of Deep Levels in CuInS_2 Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide [J] . Xiaohui Liu, Xiaoming Dou, Mutsumi Sugiyama Japanese journal of applied physics . 2012,第12期

机译：二叔丁基硫醚硫化硫化CuInS_2薄膜深层的光致发光研究
4. Sulfurization growth of CuInS2 thin films and solar cells using ditertiarybutylsulfide as a less-hazardous source [C] . Sugiyama M. Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE . 2011

机译：使用二叔丁基硫化物作为危害较小的源来硫化CuInS2薄膜和太阳能电池
5. The Development of Novel-Single Source Precursors for the Growth of Zinc Oxide Thin Films via Atmospheric Pressure Metal Organic Chemical Vapor Deposition (AP-MOCVD) For Applications in Microelectronic Devices. [D] . Johnson, Keneshia Onekia. 2013

机译：通过大气压金属有机化学气相沉积（AP-MOCVD）开发用于氧化锌薄膜生长的新型单源前驱体，用于微电子器件。
6. Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources [O] . Xingfang Liu, Guosheng Sun, Bin Liu, 2013

机译：固碳源的石墨烯-石墨碳纳米薄片模板在硅基底上生长六方柱状纳米晶结构的SiC薄膜
7. Growth mechanisms of CuInS2 formed by the sulfurization of thin metallic films [O] . Rodriguez Alvarez Humberto 2010

机译：由薄金属薄膜硫化形成的CuIns2的生长机制
8. RF Sputtering of Thin Film Radiation Sources and Hazardous Materials [R] . W. F. Riemath, G. G. Culver, J. H. Jarrett 1973

机译：薄膜辐射源和有害物质的射频溅射

Sulfurization Growth of CulnS_2 Thin Film Using Ditertiarybutylsulfide as a Less Hazardous Source

摘要

著录项

相似文献

相关主题

期刊订阅