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首页> 外文期刊>Japanese journal of applied physics >Effect of Substrate Surface Finish and Proximity Distance on Compositional Shift of InGaAsP Metal-Organic Vapor Phase Epitaxy in a High-Speed-Rotation Multiple-Substrate Reactor
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Effect of Substrate Surface Finish and Proximity Distance on Compositional Shift of InGaAsP Metal-Organic Vapor Phase Epitaxy in a High-Speed-Rotation Multiple-Substrate Reactor

机译：高速旋转多衬底反应器中衬底表面光洁度和邻近距离对InGaAsP金属有机气相外延组成偏移的影响

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摘要

Shift of photoluminescence (PL) wavelengths toward shorter wavelengths (blue shift) in a specific area of InGaAsP quaternary epitaxial layers, grown in a high-speed rotating-disk type metal-organic vapor phase epitaxy (MOVPE) reactor, was found to be a deteriorative factor of PL wavelength uniformity in the epitaxial layers. Experiments were performed to generate a blue shift of PL wavelength, with two mirror-polished substrates placed in adjacent positions in the wafer carrier. Analysis of compositional distribution over 61 points was performed in InGaAsP/lnP epitaxial layers with band gap corresponding to the 1310nm PL wavelength. From this analysis, it was found that the blue shift of PL wavelength was dependent on the compositional shift of group V elements. In addition, the effect of substrate surface finish (mirror-polished or as-etched) was found to be a major cause of the compositional shift of group V elements. We found that, as the proximity distance between adjacent substrates was increased, there existed a critical proximity distance at which the blue shift disappeared.
机译：发现在高速旋转盘式金属有机气相外延（MOVPE）反应器中生长的InGaAsP第四外延层特定区域中的光致发光（PL）波长向较短波长的偏移（蓝移）是一种外延层中PL波长均匀性的恶化因素。进行实验以产生PL波长的蓝移，将两个镜面抛光的基板放置在晶片载体中的相邻位置。在InGaAsP / InP外延层中进行了61点以上的成分分布分析，其带隙对应于1310nm PL波长。从该分析中发现，PL波长的蓝移取决于V族元素的组成偏移。另外，发现基板表面光洁度（镜面抛光或蚀刻后的）的影响是V族元素的组成偏移的主要原因。我们发现，随着相邻基板之间的接近距离增加，存在蓝移消失的临界接近距离。

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  • 来源
    《Japanese journal of applied physics》 |2011年第8issue1期|p.085601.1-085601.8|共8页
  • 作者

    Eiichi Shimizu; Hajime Momoi;

  • 作者单位

    Development Section, Toda Works, JX Nippon Mining & Metals Corporation, Toda, Saitama 335-0026, Japan;

    Development Section, Toda Works, JX Nippon Mining & Metals Corporation, Toda, Saitama 335-0026, Japan;

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