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Etch Damage of Ge_2Sb_2Te_5 for Different Halogen Gases

机译：Ge_2Sb_2Te_5对不同卤素气体的腐蚀损伤

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摘要

Etch damage of Ge_2Sb_2Te_5 (GST) has been investigated after etching in halogen inductively coupled plasmas (ICPs) such as CF_4, Cl_2, and HBr. X-ray photoelectron spectra of Ge, Sb, and Te on the etched surfaces showed different depths of etch damage depending on the halogen-based plasmas. The blank GST etched by CF_4 showed a lower total-halogen-percentage remaining on the etched surface than that etched by CI_2 even though the depth of halogenations was the deepest for the GST etched by CF_4 owing to the highest reactivity. However, when a GST feature masked by SiO_2/Ti/TiN was etched, owing to the reaction of O from the SiO_2 mask and C from CF_4, a thinner/or no C-F polymer appeared to be formed on the etched sidewall; therefore, the highest halogenation was observed on the GST etched by CF_4. Among the halogen-gases investigated, HBr showed the lowest damage due to the lowest reactivity.
机译：在诸如CF_4，Cl_2和HBr的卤素感应耦合等离子体（ICP）中进行蚀刻后，已经研究了Ge_2Sb_2Te_5（GST）的蚀刻损伤。蚀刻表面上的Ge，Sb和Te的X射线光电子能谱显示出不同的蚀刻破坏深度，具体取决于基于卤素的等离子体。 CF_4刻蚀的空白GST与CF_2刻蚀的表面相比，残留的总卤素百分比更低，尽管CF_4刻蚀的GST的卤化深度最深，因为其反应性最高。然而，当蚀刻被SiO_2 / Ti / TiN掩盖的GST特征时，由于来自SiO_2掩膜的O和来自CF_4的C的反应，在蚀刻的侧壁上似乎没有形成较薄的C-F聚合物或没有形成C-F聚合物。因此，在CF_4蚀刻的GST上观察到最高的卤化。在所研究的卤素气体中，由于最低的反应性，HBr的损害最低。

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  • 来源
    《Japanese journal of applied physics》 |2011年第8issue1期|p.086501.1-086501.4|共4页
  • 作者

    Se-Koo Kang; Min-Hwan Jeon; Jong-Yoon Park; Myung S. Jhon; Geun-Young Yeom;

  • 作者单位

    SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;

    SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;

    SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;

    Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, U.S.A.;

    SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea,Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea;

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