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首页> 外文期刊>Japanese journal of applied physics >Effect of Porous Counter Electrode with Highly Conductive Layer on Dye-Sensitized Solar Cells
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Effect of Porous Counter Electrode with Highly Conductive Layer on Dye-Sensitized Solar Cells

机译:高导电层多孔对电极对染料敏化太阳能电池的影响

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摘要

A Pt/porous titanium (Ti)/dense Ti/aluminum (Al)/glass composite counter electrode for a dye-sensitized solar cell (DSC) was fabricated and characterized. The introduction of a highly conductive Al film drastically reduced the sheet resistance of the counter electrode to improve the short circuit current and fill factor of the DSC. Porous and dense Ti layers were deposited by the DC magnetron sputtering process. The dense Ti layer protected the Al film from dissolution in the electrolyte solution to stabilize the composite counter electrode. The porous Ti layer with a larger electrochemical active area at the electrolyte/counter electrode interface mainly improved the short circuit current of the DSC. The results indicate the importance of the introduction of porous materials with highly conductive films into the counter electrode of a DSC and the suitability of composite materials of Al and Ti for the counter electrode.
机译:制备并表征了用于染料敏化太阳能电池(DSC)的Pt /多孔钛(Ti)/致密Ti /铝(Al)/玻璃复合对电极。高导电性Al膜的引入极大地降低了对电极的薄层电阻,从而改善了DSC的短路电流和填充系数。通过直流磁控溅射工艺沉积多孔且致密的Ti层。致密的Ti层保护了Al膜免于溶解在电解质溶液中,从而稳定了复合对电极。在电解质/对电极界面处具有较大电化学活性区域的多孔Ti层主要改善了DSC的短路电流。结果表明将具有高导电膜的多孔材料引入DSC的对电极中的重要性以及Al和Ti的复合材料对于对电极的适用性。

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  • 来源
    《Japanese journal of applied physics》 |2011年第8issue1期|p.082303.1-082303.5|共5页
  • 作者单位

    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;

    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;

    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;

    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;

    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;

    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;

    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;

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