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首页> 外文期刊>Japanese journal of applied physics >Effects of Heat Treatment on the Resistive Switching Characteristics of Pt/NiO/Pt Stack Structures
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Effects of Heat Treatment on the Resistive Switching Characteristics of Pt/NiO/Pt Stack Structures

机译：热处理对Pt / NiO / Pt叠层结构电阻转换特性的影响

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摘要

Effects of heat treatment on the resistive switching characteristics of Pt/NiO/Pt cells were investigated. Heat treatment was carried out under various conditions, and different resistive switching characteristics were obtained depending on the oxygen desorption from NiO films. After heal treatment by which the oxygen composition of the NiO films was not changed, the resistance ratio was markedly improved owing to the increase in the initial resistance (RIni). It was revealed that the increase in RIni is linked to the increase in its activation energy, which may be related to carrier excitation from defect states. On the other hand, many of the cells were initially in the low-resistance state after heat treatment by which the oxygen desorption from NiO films took place. This result indicates the formation of conductive filaments by oxygen desorption.
机译：研究了热处理对Pt / NiO / Pt电池电阻转换特性的影响。在各种条件下进行热处理，并且根据从NiO膜中解吸的氧气获得不同的电阻开关特性。在不改变NiO膜的氧组成的修复处理之后，由于初始电阻（RIni）的增加，电阻比显着提高。揭示了RIni的增加与其活化能的增加有关，这可能与缺陷状态的载流子激发有关。另一方面，许多单元在热处理之后最初处于低电阻状态，由此发生了氧从NiO膜中的脱附。该结果表明通过氧解吸形成导电丝。

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  • 来源
    《Japanese journal of applied physics》 |2011年第8issue1期|p.081102.1-081102.4|共4页
  • 作者

    Tatsuya Iwata; Yusuke Nishi; Tsunenobu Kimoto;

  • 作者单位

    Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan;

    Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan;

    Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan,Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8510, Japan;

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