Reactive Sputter Deposition of SiO_xN_y Films under Ar-CO_2-N_2 Atmosphere

Toru Ashida; Hideo Omoto; Takao Tomioka; Atsushi Takamatsu

首页> 外文期刊>Japanese journal of applied physics >Reactive Sputter Deposition of SiO_xN_y Films under Ar-CO_2-N_2 Atmosphere

【24h】

Reactive Sputter Deposition of SiO_xN_y Films under Ar-CO_2-N_2 Atmosphere

机译：Ar-CO_2-N_2气氛下SiO_xN_y薄膜的反应溅射沉积

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Amorphous SiO_xN_y films were deposited by pulsed-dc reactive magnetron sputtering using a boron-doped Si target under Ar-CO_2-N_2 atmosphere. The refractive index (n) varied continuously between 1.54 and 2.0 with the CO_2 flow ratio [CO_2/(CO_2 + N2)], maintaining a high transparency in the visible range. Furthermore, the variations in the cathode voltage and deposition rate revealed that the target surface was progressively oxidized with increasing CO_2 flow ratio. Thus, the films deposited with the CO_2 gas exhibited a gradual n shift and a high deposition rate as compared with that deposited with the O_2 gas. On the other hand, these films had the typical composition and structure of SiO_xN_y films prepared by reactive sputtering. These results indicate that the CO_2 gas is an effective reactive gas for controlling the n of the SiO_xN_y films.

机译：在Ar-CO_2-N_2气氛下，采用掺硼Si靶，通过脉冲直流反应磁控溅射沉积非晶SiO_xN_y薄膜。折射率（n）以CO_2流量比[CO_2 /（CO_2 + N2）]在1.54和2.0之间连续变化，从而在可见光范围内保持高透明度。此外，阴极电压和沉积速率的变化表明靶表面随着CO 2流量比的增加而逐渐被氧化。因此，与用O_2气体沉积的膜相比，用CO_2气体沉积的膜表现出逐渐的n位移和高沉积速率。另一方面，这些膜具有通过反应溅射制备的SiO_xN_y膜的典型组成和结构。这些结果表明，CO 2气体是用于控制n个SiO_xN_y膜的有效反应气体。

著录项

来源
《Japanese journal of applied physics》 |2011年第8issue3期|p.08KE03.1-08KE03.4|共4页
作者
Toru Ashida; Hideo Omoto; Takao Tomioka; Atsushi Takamatsu;
展开▼
作者单位

Glass Research Center, Central Glass Co., Ltd., Matsusaka, Mie 515-0001, Japan;

Glass Business Planning & Development Department, Central Glass Co., Ltd., Chiyoda, Tokyo 101-0054, Japan;

Glass Research Center, Central Glass Co., Ltd., Matsusaka, Mie 515-0001, Japan;

Glass Research Center, Central Glass Co., Ltd., Matsusaka, Mie 515-0001, Japan;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Investigations of Cuprous Oxide and Cupric Oxide Thin Films by Controlling the Deposition Atmosphere in the Reactive Sputtering Method [J] . Jinyan Pan, Chengfu Yang, Yunlong Gao Sensors and materials . 2016,第7期

机译：反应溅射法控制沉积气氛对氧化亚铜和氧化铜薄膜的研究
2. Effects of deposition and annealing atmospheres on phase transition of tungsten oxide films grown by ultra-high-vacuum reactive sputtering [J] . G.S. Ghen, W.L. Liao, S.T. Chen, Thin Solid Films . 2005,第1a2期

机译：沉积和退火气氛对超高真空反应溅射生长氧化钨薄膜相变的影响
3. SiO_xN_y thin films deposited by reactive sputtering: Process study and structural characterisation [J] . F. Rebib, E. Tomasella, M. Dubois, Thin Solid Films . 2007,第7a8期

机译：反应溅射沉积SiO_xN_y薄膜的研究及结构表征
4. Change of optical electrical and structural properties of sputtered indium tin oxide films by application of a new reactive sputter atmosphere [C] . Author(s): M.Rottmann Humboldt-Univ. Berlin Berlin Federal Republic of Germany, Karl H. Heckner Humboldt-Univ. Berlin Berlin Federal Republic of Germany. . 1994

机译：应用新的反应溅射气氛改变溅射铟锡氧化物薄膜的光电和结构性能
5. Deposition and Characterization of Indium Nitride and Aluminum Nitride Thin Films by Reactive Sputtering [D] . ?Atluri, Sushma Swaraj 2020

机译：沉积和氮化铟的表征和氮化铝薄膜的反应溅射
6. In situ and real-time monitoring of structure formation during non-reactive sputter deposition of lanthanum and reactive sputter deposition of lanthanum nitride [O] . Bärbel Krause, Dmitry S. Kuznetsov, Andrey E. Yakshin, -1

机译：镧的非反应性溅射沉积和氮化镧的反应性溅射沉积过程中结构形成的原位和实时监测
7. Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films [O] . Ponon Nikhil K., Appleby Daniel J.R., Arac Erhan, 2015

机译：沉积条件和沉积后退火对反应溅射氮化钛薄膜的影响

Reactive Sputter Deposition of SiO_xN_y Films under Ar-CO_2-N_2 Atmosphere

摘要

著录项

相似文献

相关主题

期刊订阅