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首页> 外文期刊>Japanese journal of applied physics >Fabrication of Ni/AI_2O_3/Ni Heteroepitaxial Junction by Post-Hydrogen Reduction of NiO/AI_2O_3/NiO Trilayered Epitaxial Thin Film
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Fabrication of Ni/AI_2O_3/Ni Heteroepitaxial Junction by Post-Hydrogen Reduction of NiO/AI_2O_3/NiO Trilayered Epitaxial Thin Film

机译:通过加氢还原NiO / AI_2O_3 / NiO三层外延薄膜制备Ni / Al_2O_3 / Ni异质外延结

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摘要

The fabrication of a Ni/AI_2O_3/Ni heteroepitaxial junction was achieved by the post-hydrogen reduction of a NiO/Al2O_3/NiO trilayered epitaxial thin film grown by pulsed laser deposition. The top and bottom NiO layers were selectively reduced to Ni metal layers showing epitaxial relationships, while the AI_2O_3 interlayer remained. The crystallographic and interfacial characteristics were confirmed by X-ray diffraction analysis, reflection high-energy electron diffraction, and transmission electron microscopy. The fabricated Ni/AI_2O_3/Ni heteroepitaxial junction exhibited atomically sharp interfaces with no amorphous boundary layer.
机译:Ni / Al_2O_3 / Ni异质外延结的制造是通过氢后还原通过脉冲激光沉积法生长的NiO / Al2O_3 / NiO三层外延薄膜实现的。顶部和底部的NiO层被选择性还原为具有外延关系的Ni金属层,而保留了AI_2O_3中间层。通过X射线衍射分析,反射高能电子衍射和透射电子显微镜证实了晶体学和界面特性。制备的Ni / Al_2O_3 / Ni异质外延结呈现出原子锐利的界面,没有非晶边界层。

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  • 来源
    《Japanese journal of applied physics》 |2011年第9issue1期|p.098004.1-098004.2|共2页
  • 作者单位

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Taiyo Yuden Co., Ltd., Takasaki, Gunma 370-3347, Japan;

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Taiyo Yuden Co., Ltd., Takasaki, Gunma 370-3347, Japan;

    Namiki Precision Jewel Co., Ltd., Adachi, Tokyo 123-8511, Japan;

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Kanagawa Industrial Technology Center, Ebina, Kanagawa 243-0435, Japan;

    Kanagawa Industrial Technology Center, Ebina, Kanagawa 243-0435, Japan;

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan,Patent Attorney, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

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