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Influence of Rapid Thermal Annealing on Raman Scattering of InN Epilayers

机译:快速热退火对InN外延层拉曼散射的影响

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摘要

We studied the Raman scattering of the InN epilayers with rapid thermal annealing (RTA). The longitudianl optical (LO) phonon in Raman spectrum shifts toward lower frequency and increases asymmetric broadening as the RTA temperature is increased. We suggest that the formation of indium-related defects, such as metallic indium clusters or indium vacancies, are responsible for the change in the asymmetric ratio in the LO mode. The E_2 (high) mode in the Raman spectrum does not exhibit significant change after RTA since the indium atom does not involve the E_2 (high) mode.
机译:我们使用快速热退火(RTA)研究了InN外延层的拉曼散射。拉曼光谱中的纵向光学(LO)声子会向低频移动,并随着RTA温度的升高而增加不对称展宽。我们认为,与铟有关的缺陷(例如金属铟簇或铟空位)的形成是导致LO模式下不对称比发生变化的原因。由于铟原子不涉及E_2(高)模,因此在RTA之后,拉曼光谱中的E_2(高)模没有显着变化。

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  • 来源
    《Japanese journal of applied physics》 |2010年第10期|p.105803.1-105803.4|共4页
  • 作者单位

    Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan;

    Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan;

    Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan;

    Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan;

    Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan,Institute of Nuclear Energy Research, P. O. Box 3.11, Luntan 32546, Taiwan;

    Electronic Engineering Department, Tung Nan Institute of Technology, Taipei 22202, Taiwan;

    Electronic Engineering Department, National Taiwan University of Science and Technology, Taipei 10617, Taiwan;

    Department of Physics, National Taiwan University, Taipei 10617, Taiwan;

    Institute of Optoelectronic Science, National Taiwan Ocean University, Keelung 20224, Taiwan;

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