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机译:快速热退火对InN外延层拉曼散射的影响
Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan;
Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan;
Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan;
Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan;
Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan,Institute of Nuclear Energy Research, P. O. Box 3.11, Luntan 32546, Taiwan;
Electronic Engineering Department, Tung Nan Institute of Technology, Taipei 22202, Taiwan;
Electronic Engineering Department, National Taiwan University of Science and Technology, Taipei 10617, Taiwan;
Department of Physics, National Taiwan University, Taipei 10617, Taiwan;
Institute of Optoelectronic Science, National Taiwan Ocean University, Keelung 20224, Taiwan;
机译:快速热退火对InN外延层光学和电学性质的影响
机译:InN外延层中的光激发载流子和表面重组速度:拉曼散射研究
机译:通过快速热退火对单层TMDCS(MO,W)(SE,SE)(SE,SE)_2的增强拉曼散射的见解
机译:拉曼散射快速热退火后氮化GaAs薄层的表征
机译:一,拉曼散射和X射线衍射研究对砷化镓-砷化铝超晶格中局限的LO和折叠的LA声子的退火作用。二。皮秒光散射研究砷化镓/铝(x)镓(1-x)砷化物多量子阱结构中的弛豫和隧穿
机译:基于镁掺杂InN外延层的增强氢检测
机译:快速热退火对III-V副词在单片硅片的螺纹脱位密度的影响
机译:快速热氧化和快速热退火技术制备的薄氧化物辐射响应