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首页> 外文期刊>Japanese journal of applied physics >Energy Barrier Reduction and Exciton Confinement Using an Intermediate Blocking Layer n Organic Light-Emitting Diodes
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Energy Barrier Reduction and Exciton Confinement Using an Intermediate Blocking Layer n Organic Light-Emitting Diodes

机译：使用中间阻挡层n的有机发光二极管降低能量和限制激子

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摘要

The intermediate blocking layer (IBL) was investigated for the development of highly efficient and bright organic light-emitting diodes (OLEDs). The insertion of an IBL between a hole transport layer and an emitting layer (EML) has resulted in the development of highly efficient and bright OLEDs. The quantum efficiency and electrical durability at high voltage were highly dependent on the thickness of the IBL. The maximum external quantum efficiency of the devices with a 1.5-nrn-thick IBL was increased by 28% compared with the reference. The enhanced performance of the OLEDs appears to be due to the improvement of carrier balance and exciton confinement.
机译：为了开发高效，明亮的有机发光二极管（OLED），对中间阻挡层（IBL）进行了研究。在空穴传输层和发光层（EML）之间插入IBL导致了高效，明亮的OLED的发展。高压下的量子效率和电耐久性高度依赖于IBL的厚度。与参考相比，具有1.5nrn厚IBL的器件的最大外部量子效率提高了28％。 OLED的性能增强似乎是由于载流子平衡和激子限制的改善所致。

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  • 来源
    《Japanese journal of applied physics》 |2010年第11期|p.110204.1-110204.3|共3页
  • 作者

    Jin Woo Park; Jin Young Oh; Hyeon Seok Hwang; Min Kyoung Jo; Sang Hun Choi; Kie Moon Song; Se Jong Lee; Hong Koo Baik;

  • 作者单位

    OLED Manufacturing Team, Samsung Mobile Display Co., Ltd., Cheonan 330-300, Korea,Department of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Korea;

    Department of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Korea;

    Department of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Korea;

    OLED Manufacturing Team, Samsung Mobile Display Co., Ltd., Cheonan 330-300, Korea;

    OLED Technology Strategy Team, LG Display Co., Ltd., Paju 413-811, Korea;

    Department of Applied Physics, Konkuk University, Chungju 380-701, Korea;

    Department of Materials Science and Engineering, Kyungsung University, Busan 608-736, Korea;

    Department of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Korea;

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