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首页> 外文期刊>Japanese journal of applied physics >Performance Comparisons of Bilayer Graphene and Graphene Nanoribbon Field-Effect Transistors under Ballistic Transport
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Performance Comparisons of Bilayer Graphene and Graphene Nanoribbon Field-Effect Transistors under Ballistic Transport

机译：双层石墨烯和石墨烯纳米带场效应晶体管在弹道传输下的性能比较

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摘要

In this paper, we investigate the upper limit performance of bilayer graphene (BLG) and graphene nanoribbon (GNR) field-effect transistors (FETs) based on a first-principles approach. We have found that GNR-FETs with ribbon widths of about 3-4 nm exhibit better device performance than n-channel Si metal-oxide-semiconductor FETs and InP-high-electron-mobility transistors (HEMTs). Although a BLG-FET shows an inferior performance potential to GNR-FETs with a similar band gap, it is comparable to InP-HEMTs. The present simulation study indicates that both GNR and BLG are expected to be a post-Si channel material for high-speed digital switches in logic circuits.
机译：在本文中，我们基于第一性原理研究了双层石墨烯（BLG）和石墨烯纳米带（GNR）场效应晶体管（FET）的上限性能。我们已经发现，带宽度约为3-4 nm的GNR-FET表现出比n沟道Si金属氧化物半导体FET和InP高电子迁移率晶体管（HEMT）更好的器件性能。尽管BLG-FET的性能潜力比带隙相似的GNR-FET差，但它可与InP-HEMT媲美。本仿真研究表明，GNR和BLG都有望成为逻辑电路中高速数字开关的Si后通道材料。

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  • 来源
    《Japanese journal of applied physics》 |2010年第11期|p.110207.1-110207.3|共3页
  • 作者

    Hiroshi Hosokawa; Ryuetaro Sako; Haruki Ando; Hideaki Tsuchiya;

  • 作者单位

    Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan;

    Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan;

    Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan;

    Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan;

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