Immediate Product after Exposing Si(111)-7×7 Surface to O_2 at 300 K

Akitaka Yoshigoe; Yuden Teraoka

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Immediate Product after Exposing Si(111)-7×7 Surface to O_2 at 300 K

机译：在300 K下将Si（111）-7×7表面暴露于O_2后的即时产品

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Using real-time O 1s X-ray photoelectron spectroscopy together with Si 2p X-ray photoelectron spectroscopy, the oxygen bonding configurations of oxides shortly after exposing the Si(111)-7x7 surface to O_2 at 300 K are revealed. It is found that the ins structure firstly forms where one oxygen atom sits in the backbond of the silicon adatom. It is confirmed that the chemisorbed molecular oxygen, the so-called paul oxygen, is the adsorbate on top of the ins structure. It is also clarified that the ad-ins structure and the ins-tri structure, where ad means an oxygen atom adsorbed onto top of the silicon adatom and tri means the interstitial oxygen atom, appear after a short time. The results implying the presence of mobile O_2 on the surface were obtained.

机译：使用实时O 1s X射线光电子能谱和Si 2p X射线光电子能谱，揭示了在300 K下将Si（111）-7x7表面暴露于O_2之后不久的氧化物的氧键构型。发现ins结构首先形成一个氧原子位于硅原子的后键中。可以确定的是，化学吸附的分子氧，即所谓的保罗氧，是ins结构顶部的被吸附物。还需要说明的是，短时后出现ad-ins结构和ins-tri结构，其中ad是指吸附在硅原子上的氧原子，而tri是指间隙氧原子。结果表明表面存在可移动的O_2。

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《Japanese journal of applied physics》 |2010年第11期|p.115704.1-115704.6|共6页
作者
Akitaka Yoshigoe; Yuden Teraoka;
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Quantum Beam Science Directorate, Japan Atomic Energy Agency, Koto, Sayo, Hyogo 679-5148, Japan;

Quantum Beam Science Directorate, Japan Atomic Energy Agency, Koto, Sayo, Hyogo 679-5148, Japan;

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Immediate Product after Exposing Si(111)-7×7 Surface to O_2 at 300 K

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