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Microscopic Distributions of Light Elements and Their Precipitates in Multicrystalline Silicon for Solar Cells

机译:太阳能电池多晶硅中轻元素及其沉淀物的微观分布

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摘要

The behaviors of carbon, nitrogen, and oxygen in multicrystalline silicon grown by the cast method were investigated using infrared absorption spectroscopy. A microscopic distribution map of the impurities and their precipitates was obtained with a spatial resolution of a few tens of urn. The distribution and bonding states depended on the impurity: nitrogen and oxygen precipitated as crystalline nitride (α-Si_3N_4) and amorphous oxide (SiO_2), respectively, while carbon distributed homogeneously as isolated substitutional atoms. The nitrogen and oxygen precipitates remained independent, and thus, they might not have formed a compound oxynitride like Si_2N_2O.
机译:使用红外吸收光谱研究了通过铸造法生长的多晶硅中碳,氮和氧的行为。获得了几十微米的空间分辨率的杂质及其沉淀物的微观分布图。分布和键合状态取决于杂质:氮和氧分别以结晶氮化物(α-Si_3N_4)和非晶氧化物(SiO_2)的形式沉淀,而碳则以孤立的取代原子的形式均匀分布。氮和氧沉淀物保持独立,因此它们可能未形成像Si_2N_2O的化合物氮氧化物。

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  • 来源
    《Japanese journal of applied physics》 |2010年第11期|p.110202.1-110202.3|共3页
  • 作者单位

    Kanagawa Industrial Technology Center, Ebina, Kanagawa 243-0435, Japan;

    Kanagawa Industrial Technology Center, Ebina, Kanagawa 243-0435, Japan,Meiji University, Kawasaki 214-8571, Japan;

    Kanagawa Industrial Technology Center, Ebina, Kanagawa 243-0435, Japan;

    University of Hyogo, Himeji, Hyogo 671-2280, Japan;

    Toyota Technological Institute, Nagoya 468-8511, Japan;

    Meiji University, Kawasaki 214-8571, Japan;

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