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首页> 外文期刊>Japanese journal of applied physics >Suppression of Threshold Voltage Fluctuation by Control of Channel Profile for NOR Flash Memory Scaling
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Suppression of Threshold Voltage Fluctuation by Control of Channel Profile for NOR Flash Memory Scaling

机译：通过控制NOR闪存扩展的通道配置文件来抑制阈值电压波动

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摘要

The threshold voltage fluctuation of one cell in NOR flash memory is investigated for the first time. The threshold voltage fluctuation of one memory cell is significantly increased by the dopant fluctuation and random telegraph signal (RTS) as the cell size is scaled down. The threshold voltage fluctuation due to RTS occupied over 50% of the total variation of one NOR memory cell, and this impact continues to increase for smaller cell area, according to the experimental result. Furthermore, the RTS amplitude for the charge trap position in a tunnel oxide is investigated by device simulation, and it is revealed that the channel doping profile significantly affects the RTS amplitude. This result indicates that the threshold voltage fluctuation of one cell in NOR flash memory is one of the most critical issues in further cell size reduction, and it is expected to be suppressed by adopting an optimal channel doping profile.
机译：首次研究了NOR闪存中一个单元的阈值电压波动。随着存储单元尺寸的减小，掺杂剂的波动和随机电报信号（RTS）会大大增加一个存储单元的阈值电压波动。根据实验结果，由于RTS引起的阈值电压波动占据了一个NOR存储单元总变化的50％以上，并且对于较小的单元面积，这种影响持续增加。此外，通过器件仿真研究了隧道氧化物中电荷陷阱位置的RTS振幅，发现沟道掺杂分布会显着影响RTS振幅。该结果表明，NOR闪存中的一个单元的阈值电压波动是进一步减小单元尺寸的最关键问题之一，并且期望通过采用最佳沟道掺杂分布来抑制它。

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  • 来源
    《Japanese journal of applied physics》 |2010年第11期|p.114302.1-114302.5|共5页
  • 作者

    Hojoong An; Kyeongrok Kim; Sora Jung; Hyungjun Yang; Yunheub Song;

  • 作者单位

    Department of Electronics and Communications Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;

    Department of Electronics and Communications Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;

    Department of Electronics and Communications Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;

    Department of Electronics and Communications Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;

    Department of Electronics and Communications Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;

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